Results 111 to 120 of about 6,900 (149)

Tailoring etch directionality in a deep reactive ion etching tool

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
Silicon deep reactive ion etching is a process that produces projected two-dimensional shapes due to the inability to control the direction of the energetic ions arriving at the surface of a wafer. The resulting etched profiles present sidewalls which are nominally 90° to the wafer surface.
A. A. Ayón, S. Nagle, L. Fréchette, A. Epstein, M. A. Schmidt   +4 more
openaire   +1 more source

Deep reactive ion etch conditioning recipe

SPIE Proceedings, 2004
Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation.
Matthew Wasilik, Ning Chen
openaire   +1 more source

Deep reactive ion etching of Pyrex glass

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308), 2002
We have developed a deep reactive ion etching of Pyrex glass in SF/sub 6/ plasma. High etch rate (/spl sim/0.6 /spl mu/m/min) and smooth surface (Ra-4 nm) were achieved at low pressure (0.2 Pa) and high self-bias (-390 V). This result indicates energetic ions for physical sputtering and for enhancing chemical reactions are required to etch materials ...
X. Li, T. Abe, M. Esashi
openaire   +1 more source

Reactive ion etching of deep trenches in silicon

SPIE Proceedings, 1992
We have developed a new production technology of deep trenches RIE with a photoresist mask. RIE was performed in a low-pressure batch diode reactor. Wafers were placed on RF (5,28 MHz) electrode covered by organic lacquer. The maximum loading was 24 wafers having a diameter of 100 mm.
Vladimir N. Bliznetsov, Oleg P. Gutshin, V. Yachmenev   +2 more
openaire   +1 more source

Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1997
The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6−O2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber.
Bo Asp Mo/ller Andersen, Ole Hansen, Martin Kristensen   +2 more
openaire   +1 more source

Deep reactive ion etching of silicon using an aluminum etching mask

SPIE Proceedings, 2003
A method for fast and efficient deep anisotropic etching of bulk silicon, using a parallel capacitively coupled plasma is presented. The effect of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 angstrom thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350mm ...
null Wei-Chih Wang, J.N. Ho, P. Reinhall
openaire   +1 more source

Investigation of Gaas Deep Etching by Using Reactive Ion Etching Technique

MRS Proceedings, 1991
ABSTRACTRIE is an important technique in obtaining anisotropie etch profile. This is a critical requirement for very deep etching which needs long etch duration. Among many factors which affect RIE characteristics in deep etching, the following are most concerned: (1) the etch mask: needs suitable plasma resistance without significant plasma attack for
Kuen-Sane Din, Gou-Chung Chi
openaire   +1 more source

Diamond Microstructuring by Deep Anisotropic Reactive Ion Etching

physica status solidi (a), 2018
Fabrication of diamond micro‐patterned structures is a technological challenge due to the outstanding hardness and chemical stability of the material. In this work, the synthetic diamond reactive ion etching (RIE) process is studied. The effects of the gas mixture and bias on the diamond etching rate are investigated.
Anton V. Golovanov, Vitaly S. Bormashov, Nikolay V. Luparev, Sergey A. Tarelkin, Sergey Y. Troschiev, Sergei G. Buga, Vladimir D. Blank   +6 more
openaire   +1 more source

Deep reactive ion etching for photonic crystals

2021
Photonic crystals are powerful tools to control light by a photonic band gap, analogous to the band gap in semiconductors. A functional class of photonic crystals can be fabricated by etching nanopores in silicon with controlled shape, size and reproducibility. These nanopores are created by deep reactive ion etching.
Goodwin, Melissa Jane, Vos, Willem L., Harteveld, Cornelis A.M.   +2 more
openaire   +1 more source

Cyclic deep reactive ion etching with mask replenishment

Journal of Micromechanics and Microengineering, 2007
A multi-step reactive ion etching (MS-RIE) process for silicon was developed for the fabrication of deep anisotropic, closely packed structures with vertical sidewalls. This process used repeated cycles of etching and the replenishment of masking layers, similar to the Bosch process (Laermer and Schilp 1996 US Patent 5,498,312) [1] that is employed in ...
T N Adam, S Kim, P-C Lv, G Xuan, S K Ray, R T Troeger, D Prather, J Kolodzey   +7 more
openaire   +1 more source