Results 121 to 130 of about 6,900 (149)

Formation of deep holes in silicon by reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1987
Anisotropic etching for the formation of deep holes in the single crystalline silicon has been reported. This technique uses a film deposited on the sidewall to inhibit the lateral etching caused by the bombardment of ions which impinge on the silicon substrate out of the vertical direction.
Kado Hirobe, Ko-ichirou Kawamura, Kazuo Nojiri   +2 more
openaire   +1 more source

Tapered Deep Reactive Ion Etching: Method and Characterization

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007
This work presents a method for etching tapered sidewalls in silicon using deep reactive ion etching. The method is based on consecutive switching between anisotropic etching using the Bosch process and isotropic dry etching. By controlling the etch depths of the anisotropic and isotropic etch sessions, the sidewall angle can be controlled over a ...
Niclas Roxhed, Patrick Griss, Goran Stemme   +2 more
openaire   +1 more source

Silicon Germanium as a novel mask for silicon deep reactive ion etching

2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), 2012
This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 1:800).
Serry, Mohamed Y., Rubin, Andrew, Ibrahem, Mohammed Aziz, Sedky, Sherif M.   +3 more
openaire   +2 more sources

Advanced deep reactive ion etching: a versatile tool for microelectromechanical systems

Journal of Micromechanics and Microengineering, 1998
Advanced deep reactive ion etching (ADRIE) is a new tool for the fabrication of bulk micromachined devices. Different sensors and actuators which use ADRIE alone or combined with other technologies such as surface micromachining of silicon are presented here. These examples demonstrate the potential and the design freedom of this tool, allowing a large
Clerc, P.-A., Dellmann, L., Grétillat, F., Grétillat, M.-A., Indermühle, P.-F., Jeanneret, S., Luginbuhl, Ph., Marxer, C., Pfeffer, T., Racine, G.-A., Roth, S., Staufer, U., Stebler, C., Thiébaud, P., de Rooij, N. F.   +14 more
openaire   +2 more sources

Aspect ratio dependent etching in advanced deep reactive ion etching of quartz

2017 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2017
Quartz due to its piezoelectricity and its good temperature stability is one of the most used materials in devices for time-frequency applications. Quartz resonators are generally obtained by chemical etching or chemical mechanical polishing but these two methods do not allow the shrinking of the dimensions of the devices and limit reachable geometry ...
P. Chapellier, P. Lavenus, B. Bourgeteau-Verlhac, C. Gageant, O. Le Traon, B. Dulmet   +5 more
openaire   +1 more source

Challenges, developments and applications of silicon deep reactive ion etching

Microelectronic Engineering, 2003
High etching speed, good uniformity and profile control, high aspect ratio capabilities and reliable notching suppression at dielectric interfaces are key requirements in the industrial application of silicon DRIE processing. An optimized hardware for balanced RF drive at high power levels (3 kW) of the inductive plasma source in combination with ...
F. Laermer, A. Urban
openaire   +1 more source

Characterization of the microloading effect in deep reactive ion etching of silicon

SPIE Proceedings, 2004
Knowledge of the magnitude and characteristic length scales of chip-scale process variations due to varying substrate pattern density is essential if compensation measures, such as incorporation of dummy structures, are to be taken during mask layout.
Soren Jensen, Ole Hansen
openaire   +1 more source

Deep reactive ion etching of through silicon vias

2008
This chapter contains sections titled: • Introduction• DRIE Equipment and Characterization• DRIE Processing• Practical Solutions in Via Etching• Concluding Remarks• Appendix A: Glossary of Abbreviations• Appendix B: Examples of DRIE Recipes ...
Roozeboom, Fred, Blauw, Michiel A., Lamy, Yann, van Grunsven, Eric, Dekkers, Wouter, Verhoeven, Jan F., van den Heuvel, Eric F., van der Drift, Emile, Kessels, Erwin W.M.M., van de Sanden, Richard M.C.M.   +9 more
openaire   +1 more source

Deep Reactive Ion Etching

2010
Laermer, Franz, Franssila, Sami, Sainiemi, Lauri, Kolari, Kai   +3 more
openaire   +6 more sources

Deep Reactive Ion Silicon Etching

2011
openaire   +1 more source