Results 11 to 20 of about 53,870 (328)
This study empirically investigates the influences of several parameters on surface morphology and etch rate in a high-aspect-ratio silicon etching process. Two function formulas were obtained, revealing the relationship between the controlled parameters
Tiantong Xu +4 more
doaj +2 more sources
Silicon Deep Reactive Ion Etching with aluminum hard mask
Silicon Deep Reactive Ion Etching (DRIE) process using a multi-layer mask containing a sputtered Aluminum thin film is studied. Aluminum is a candidate for very high aspect ratio DRIE, due to tis very low etch rate, but its adoption is hindered by the presence of micromasking.
Bagolini, A +3 more
openaire +4 more sources
Deep reactive ion etching of auxetic structures: present capabilities and challenges [PDF]
Auxetic materials (or metamaterials) have negative Poisson ratios (NPR) and display the unexpected properties of lateral expansion when stretched, and equal and opposing densification when compressed. Such auxetic materials are being used more frequently
A. Muslija, A. Díaz Lantada
semanticscholar +3 more sources
Three step deep reactive ion etch for high density trench etching
A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10μm wide to a depth of 130μm into silicon with an etch rate of 2.5μm min-1. The aim of this process is to obtain sidewalls with an angle close to 90°. The process allows the etching of multiple trenches with high aspect ratios that are closely placed together.
Lips, Bram, Puers, Bob
openaire +2 more sources
Towards high-throughput large-area metalens fabrication using UV-nanoimprint lithography and Bosch deep reactive ion etching. [PDF]
We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by the use of standard industrial high-throughput silicon processing techniques: UV nano imprint lithography (UV-NIL) combined with continuous reactive ion ...
Christopher A. Dirdal +5 more
semanticscholar +1 more source
Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication
This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology ...
Michael Huff
doaj +1 more source
Development of Micron Sized Photonic Devices Based on Deep GaN Etching
In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate ...
Karim Dogheche +3 more
doaj +1 more source
Redeposition-Free Deep Etching in Small KY(WO4)2 Samples
KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices.
Simen Mikalsen Martinussen +3 more
doaj +1 more source
Etch mechanism of an Al2O3 hard mask in the Bosch process
The etching of high aspect ratio structures in silicon via the Bosch process is essential in modern technologies such as microelectromechanical systems (MEMS) and through‑silicon vias (TSV) fabrication.
Martin Drost +7 more
doaj +1 more source
Deep reactive-ion etching (DRIE) is commonly used for high aspect ratio silicon micromachining. However, scalloping, which is the result of the alternating Bosch process of DRIE, can cause many problems in the subsequent process and degrade device ...
Jin Soo Park +7 more
doaj +1 more source

