The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches [PDF]
, 1994 Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal
Boer, Meint de +4 more
core +9 more sources
Micromachines, 2018 A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution.
Jia-Cheng Yu +6 more
doaj +1 more source
Exploring Vacuum Casting Techniques for Micron and Submicron Features [PDF]
, 2004 A study of resolution limits in standard rapid prototyping vacuum cast molding processes and adaptation of this technique to reach submicron accuracy is proposed.
Denoual, M., Lepioufle, B., Mognol, P.
core +1 more source
Low temperature sacrificial wafer bonding for planarization after very deep etching [PDF]
, 1994 A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes ...
Berenschot, J.W. +3 more
core +2 more sources
Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process
Dianzi Jishu Yingyong, 2018 Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it.
Zhang Haihua, Lv Yufei, Lu Zhongxuan
doaj +1 more source
The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]
, 1994 Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J. +4 more
core +4 more sources
Lithography-Free Route to Hierarchical Structuring of High-chi Block Copolymers on a Gradient Patterned Surface [PDF]
, 2020 A chemically defined patterned surface was created via a combined process of controlled evaporative self-assembly of concentric polymer stripes and the selective surface modification of polymer brush.
Byun, Myunghwan +4 more
core +1 more source
Planarization and fabrication of bridges across deep groves or holes in silicon using a dry film photoresist followed by an etch back [PDF]
, 1994 A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes.
Berenschot, J.W. +2 more
core +3 more sources
Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [PDF]
, 2002 This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures.
Boer, Meint J. de +6 more
core +2 more sources
Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon
Proceedings, 2017 This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be ...
Marta Kluba +4 more
doaj +1 more source