Results 151 to 160 of about 2,694 (179)

Three-Dimensional Heterogeneous Bonding for High-Density and Low-Noise TMR Sensing Arrays. [PDF]

Adv Sci (Weinh)
Han Z, Jin Z, Zhang C, Chen J.
europepmc   +1 more source

Design and Fabrication of Embedded Microchannel Cooling Solutions for High-Power-Density Semiconductor Devices. [PDF]

Micromachines (Basel)
Fu Y, Shan G, Zhang X, Zhao L, Yang Y.
europepmc   +1 more source

A Sub-Milliwatt Graphene-Based Thermal Conductivity Detector for On-Site Gas Analysis. [PDF]

Sensors (Basel)
Sium FS, Peng Y, Tran S, Mahmud KR, Hasan MR, Noh S, Mastrangelo CH, Kim H.   +7 more
europepmc   +1 more source

Development of a novel radially-distributed spiral bilayer thermopile infrared sensor with enhanced responsivity. [PDF]

Microsyst Nanoeng
Xia Y, Meng X, Lv Y, Han X, Tang Y, Jiang W, Xu D, Lu D, Jing W, Yang P, Zhao L.   +10 more
europepmc   +1 more source

Wafer-scale integration of photonic integrated circuits and atomic vapor cells. [PDF]

Nanophotonics
Grosman A, Zektzer R, Mazurski N, Stern L, Levy U.   +4 more
europepmc   +1 more source

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE) [PDF]

Journal of Microelectromechanical Systems, 2002
The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence ...
Kuo-Shen Chen, Xin Zhang, S M Spearing   +2 more
exaly   +4 more sources

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process [PDF]

Materials Science Forum, 2006
High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR ≤1) deep (>100 *m) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition
Glenn M Beheim, Beheim Glenn M
exaly   +4 more sources

Deep reactive ion etching as a tool for nanostructure fabrication

Journal of Vacuum Science & Technology B, 2009
Deep reactive ion etching (DRIE) is investigated as a tool for the realization of nanostructures and architectures, including nanopillars,siliconnanowires or carbon nanotubes on Si nanopillars, nanowalls, and nanonetworks.
A Colli, Jikui Luo, Andrew J Flewitt
exaly   +2 more sources