Results 11 to 20 of about 106,345 (262)
Spiking Neural Networks (SNNs) have shown capabilities of achieving high accuracy under unsupervised settings and low operational power/energy due to their bio-plausible computations.
Rachmad Vidya Wicaksana Putra +2 more
doaj +1 more source
Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies
This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scaling, we introduce a multi-stage simulation flow to study ...
Salvatore M. Amoroso +9 more
doaj +1 more source
Serum starvation induces DRAM expression in liver cancer cells via histone modifications within its promoter locus. [PDF]
DRAM is a lysosomal membrane protein and is critical for p53-mediated autophagy and apoptosis. DRAM has a potential tumor-suppressive function and is downregulated in many human cancers.
Peihua Ni +8 more
doaj +1 more source
An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution
This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell leakage current, which determines aspects of DRAM performance ...
Min Hee Cho +7 more
doaj +1 more source
Interposing Flash between Disk and DRAM to Save Energy for Streaming Workloads [PDF]
In computer systems, the storage hierarchy, composed of a disk drive and a DRAM, is responsible for a large portion of the total energy consumed. This work studies the energy merit of interposing flash memory as a streaming buffer between the disk drive ...
Hartel, P.H. +3 more
core +6 more sources
Modern DRAM devices’ performance and energy efficiency are significantly improved when the row-buffer locality is exploited properly. In multi-core architectures, however, the DRAM-based main memory banks used by the processing units, called cores,
Tareq A. Alawneh +3 more
doaj +1 more source
The related technologies and defense methods of the current Row Hammer vulnerabilities were analyzed and summarized, and the security problems and possible precautions were pointed out.
WANG Wenwei, LIU Peishun
doaj +1 more source
With technology scaling, maintaining the reliability of dynamic random-access memory (DRAM) has become more challenging. Therefore, on-die error correction codes have been introduced to accommodate reliability issues in DDR5.
Duy-Thanh Nguyen +3 more
doaj +1 more source
Inverted bit‐line sense amplifier with offset‐cancellation capability
An inverted bit‐line sense amplifier (BLSA) equipped with offset compensation capability for low‐power DRAM applications is proposed. The sequential operation of the inverted BLSA allows us to eliminate the edge dummy array in an open bit‐line structure ...
J. Park +3 more
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ZEM: Zero-Cycle Bit-Masking Module for Deep Learning Refresh-Less DRAM
In sub-20 nm technologies, DRAM cells suffer from poor retention time. With the technology scaling, this problem tends to be worse, significantly increasing refresh power of DRAM.
Duy-Thanh Nguyen +4 more
doaj +1 more source

