Results 31 to 40 of about 97,626 (219)

Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation [PDF]

open access: yes, 2016
Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0 ...
Amat Bertran, Esteve   +3 more
core   +3 more sources

Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

open access: yesMicromachines, 2020
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Hyeonjeong Kim   +5 more
doaj   +1 more source

Implications of non-volatile memory as primary storage for database management systems [PDF]

open access: yes, 2017
Traditional Database Management System (DBMS) software relies on hard disks for storing relational data. Hard disks are cheap, persistent, and offer huge storage capacities. However, data retrieval latency for hard disks is extremely high.
Armejach Sanosa, Adrià   +4 more
core   +2 more sources

Novel Dual Work Function Buried Channel Array Transistor Process Design for Sub-17 nm DRAM

open access: yesIEEE Access
This paper introduces the smallest dynamic random access memory (DRAM) cell, which was implemented using a new transistor structure, the dual work function - buried channel array transistor (DWF-BCAT).
Dong-Sik Park   +7 more
doaj   +1 more source

Connections Between Perceived Social Support and the Body Image in the Group of Women With Diastasis Recti Abdominis

open access: yesFrontiers in Psychology, 2021
Background: The psychological features of the body image and the role of perceived social support for women with diastasis recti abdominis (DRAM) is significant for the treatment of this group of patients, but it is difficult to identify research on this
Bernadetta Izydorczyk   +4 more
doaj   +1 more source

Understanding Reduced-Voltage Operation in Modern DRAM Chips: Characterization, Analysis, and Mechanisms

open access: yes, 2017
The energy consumption of DRAM is a critical concern in modern computing systems. Improvements in manufacturing process technology have allowed DRAM vendors to lower the DRAM supply voltage conservatively, which reduces some of the DRAM energy ...
Agrawal, Aditya   +9 more
core   +1 more source

Translation, Cross-cultural Adaptation and Reliability of Brazilian portuguese version of the DRAM Questionnaire for Psychometric Evaluation in Low Back Pain [PDF]

open access: yesRevista Brasileira de Ortopedia, 2020
Objective Based on studies regarding pain physiology and its relation to emotional distress conditions, psychological evaluation became essential to determine the most favorable patient profiles to distinct therapeutic approaches.
Carlos Tucci Neto   +4 more
doaj   +3 more sources

Improving DRAM Performance by Parallelizing Refreshes with Accesses

open access: yes, 2017
Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests while being ...
Alameldeen, Alaa R.   +6 more
core   +2 more sources

Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM

open access: yesIEEE Access
The challenges associated with semiconductor are increasing because of the rapid changes in the semiconductor market and the extreme scaling of semiconductors, with some processes reaching their technological limits.
Hyojin Park   +5 more
doaj   +1 more source

Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage

open access: yesMicromachines, 2021
With the downscaling in device sizes, process-induced parameter variation has emerged as one of the most serious problems. In particular, the parameter fluctuation of the dynamic random access memory (DRAM) sense amplifiers causes an offset voltage ...
Kyung Min Koo   +4 more
doaj   +1 more source

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