Results 51 to 60 of about 941 (185)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Multi-Gigabyte On-Chip DRAM Caches for Servers

, 2015
While DRAM latency has long been recognized as a major bottleneck in servers, DRAM bandwidth is emerging as an important bottleneck as server processors shift to many-core architectures to allow for sustainable throughput improvements. The rapid expansion of the digital universe, increasingly stored in memory, rapidly pushes the need for higher DRAM ...
openaire   +1 more source

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials, Volume 12, Issue 10, 25 May 2026.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
wiley   +1 more source

Uncovering In-DRAM RowHammer Protection Mechanisms:A New Methodology, Custom RowHammer Patterns, and Implications

, 2021
Razavi, Kaveh/0000-0002-8588-7100;The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die ...
Onur Mutlu, Hasan Hassan, Yahya Can Tugrul, Victor van der Veen, Kim, Jeremie S., Mutlu, Onur, Hassan, Hasan, Tugrul, Yahya Can, Van der Veen, Victor, Jeremie S. Kim, Kaveh Razavi, Razavi, Kaveh   +11 more
core   +1 more source

Oxide Ceramics Large‐Scale Integration Devices to Mitigate Global Extreme Weather Due to Computers in the AI Era

International Journal of Ceramic Engineering &Science, Volume 8, Issue 3, May 2026.
Crystal IO FETs feature (1) extremely low off current and (2) high on current. For ultralow‐power consumption, we are aiming at replacing conventional memories by crystal IO‐based memories and ultralow‐power ALUs using AiMC FETs in the subthreshold regime. This report will introduce the trend of these technologies.
Shunpei Yamazaki, Tatsuya Onuki, Satoru Saito, Kazuki Tsuda, Hiromichi Godo, Takanori Matsuzaki, Koji Kusunoki, Yuto Yakubo, Hidekazu Miyairi, Ryota Hodo, Yasuhiro Jinbo, Fumito Isaka, Yuji Egi, Yoshinori Ando, Motomu Kurata, Tsutomu Murakawa, Takashi Shingu, Ryosuke Motoyoshi, Yosuke Tsukamoto, Yukinori Shima, Masami Jincho, Yasutaka Nakazawa, Masahiro Watanabe, Kayo Kumakura, Masataka Nakada, Ami Sato, Nobuharu Ohsawa, Kenichi Okazaki   +27 more
wiley   +1 more source

A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications

International Journal of Nanomedicine, 2019
Mingzhi Dai1,2, Yongbin Hu,3 Changhe Huo,1 Thomas J Webster,4 Liqiang Guo31Ningbo Institute of Materials and Technology Engineering, Chinese Academy of Sciences, Beijing 315201, People’s Republic of China; 2Center of Materials Science and ...
Dai M, Hu Y, Huo C, Webster TJ, Guo L
doaj  

Novel Frame Buffer Pixel Circuits and Silicon Backplane Development for Polarization-Independent LCOS

IEEE Photonics Journal
This project aims to develop novel frame buffer pixel circuit-based silicon backplanes using 180 nm process technology for polarization-independent liquid crystal on silicon (PI-LCOS) phase modulators.
Qirui Zhang, Isaac Zachmann, Lianhua Ji, Chongchang Mao   +3 more
doaj   +1 more source

Views from the hill: Deer stalkers' perspectives on land‐use change in the Scottish Highlands

People and Nature, Volume 8, Issue 5, Page 1185-1197, May 2026.
Abstract Land‐use and wildlife management are changing globally as part of efforts to address contemporary environmental challenges. In the Scottish Highlands, the hunting—or ‘stalking’—of deer has entered a period of considerable flux primarily because of national policy changes to mitigate climate change and biodiversity loss.
Callum Leavey‐Wilson, Janet A. Fisher, Sam Staddon   +2 more
wiley   +1 more source

Interface Engineering of Chip Surfaces via Silane Treatments for Robust Underfill Adhesion

Small Structures, Volume 7, Issue 5, May 2026.
Void formation at underfill–solder bump interfaces requires complex process control and extended thermal exposure, limiting the reliability of advanced semiconductor packaging. To overcome this limitation, direct organosilane surface modification is selected to enable uniform interfacial wetting while preserving underfill integrity, offering a reliable
Zambaga Otgonbayar, Gyu‐Sik Park, Won‐Chun Oh, Gi‐Hwan Kim, Yoon‐Ho Ra, Jungchul Noh, Hyung Do Kim, Myeongjin Kim, Chang‐Min Yoon   +8 more
wiley   +1 more source

A DRAM Centric NoC Architecture and Topology Design Approach [PDF]

, 2011
Most communication traffic in today’s System on Chips (SoC) is DRAM centric. The NoC should be designed to efficiently handle the many-to-one communication pattern, funneling to and from the DRAM controller.
De Micheli, Giovanni, Ciprian Seiculescu, C. Seiculescu, S. Murali, Giovanni De Micheli, Seiculescu, Ciprian, Benini, Luca, Luca Benini, G. De Micheli, Murali, Srinivasan, Srinivasan Murali   +10 more
core   +1 more source