Results 141 to 150 of about 20,942 (191)

Ga₂O₃ Solar-Blind Deep-Ultraviolet Photodetectors with a Suspended Structure for High Responsivity and High-Speed Applications. [PDF]

Research (Wash D C)
Li X, Wu Z, Fang Y, Huang S, Fang C, Wang Y, Zeng X, Yang Y, Hao Y, Liu Y, Han G.   +10 more
europepmc   +1 more source

Enhancing the Performance of Si/Ga₂O₃ Heterojunction Solar-Blind Photodetectors for Underwater Applications. [PDF]

Nanomaterials (Basel)
Li N, Liao Z, Peng L, Xue D, Peng K, Lv P.   +5 more
europepmc   +1 more source

Reliability Estimation and Failure Analysis of LEDs with Various Currents and Correlated Color Temperatures for Identical Power Ratings: A Comparative Study. [PDF]

ACS Omega
Lokesh J, Kini SG, Padmasali AN, Mahesha MG.   +3 more
europepmc   +1 more source

Magnetic decoupling as a proofreading strategy for high-yield, time-efficient microscale self-assembly. [PDF]

Proc Natl Acad Sci U S A
Liang Z, Lim MX, Zhu QZ, Mottes F, Kim JZ, Guttieres L, Smart C, Pearson T, Du CX, Brenner M, McEuen P, Cohen I.   +11 more
europepmc   +1 more source

Intracellular Quantification of an Antibiotic Metal Complex in Single Cells of Escherichia coli Using Cryo-X-ray Fluorescence Nanoimaging. [PDF]

ACS Nano
Draveny M, Chauvet H, Rouam V, Jamme F, Masi M.   +4 more
europepmc   +1 more source

Study on the Carrier Transport Process in Deep Ultraviolet Light-Emitting Diodes with Al-Content-Varied AlGaN Composite Last Quantum Barrier. [PDF]

Micromachines (Basel)
Liu W, Liu Y, Gao J, Liu Z, Shi B, Zhang L, Zhao X, Wang R.   +7 more
europepmc   +1 more source

Spectroscopic signatures of interfacial energy transfer in MoS₂-based van der Waals heterostructures under deep-UV excitation. [PDF]

RSC Adv
Lee TH, Chou SL, Huang TP, Liu CM, Chin CH, Lin MY, Chen HF, Wu YJ.   +7 more
europepmc   +1 more source

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Manufacturing with DUV lithography

IBM Journal of Research and Development, 1997
Deep-UV (DUV) lithography has been developed to scale minimum feature sizes of devices on semiconductor chips to sub-half-micron dimensions. This paper reviews early manufacturing experiences at the IBM Microelectronics Division with deep ultraviolet (DUV) lithography at a 248-nm wavelength.
S. J. Holmes, P. H. Mitchell, M. C. Hakey   +2 more
openaire   +1 more source

Planarizing AR for DUV lithography

SPIE Proceedings, 1999
A systematic approach was taken in order to improve the planarity of a DUV anti reflectant (AR) utilized for various lithographic steps, particularly those involving a patterned transparent layer. These layers can occur in both front and back end processing. Two approaches were pursued to accomplish this.
Timothy G. Adams, Suzanne Coley, Manuel doCanto, Dana Gronbeck, Matthew King, Edward K. Pavelchek   +5 more
openaire   +1 more source