Results 151 to 160 of about 20,942 (191)

Cost-effective DUV PSM process

SPIE Proceedings, 1999
A novel manufacturable and cost-effective DUV PSM process is developed and implemented in .18 micrometer and .15 micrometer PSM technology. Our novel process requires one resist coating and E-Beam exposure, hence lower cost and mis-alignment-free in chromium layer and shifter layer can be realized.
San-De Tzu, Ching S. Chiu, Chue-San Yoo, Jia-Jing Wang   +3 more
openaire   +1 more source

Microlithographic lens for DUV scanner

International Optical Design Conference, 2002
This paper describes several kinds of new technologies introduced into the latest microlithographic lens system for Nikon’s DUV (Deep Ultra Violet) scanner.
Tomoyuki Matsuyama, Yuichi Shibazaki
openaire   +1 more source

High speed diamond DUV-detector

1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1997
Two material systems compete for detector applications in the DUV range, namely GaN and diamond. Whereas GaN with a direct bandgap is intensively studied for light emitting structures, diamond with an indirect bandgap has a long background as particle and X-ray detector. In this study, a diamond DUV-detector based on a MSM structure has been fabricated
P. Gluche, O. Kohn, M. Binder, M. Adamschik, W. Ebert, A. Vescan, E. Rohrer, C.E. Nebel, E. Kohn   +8 more
openaire   +1 more source

Tunable AR for DUV lithography

SPIE Proceedings, 1997
A thermally cross-linking bottom anti-reflectant, AR2, is evaluated. The material can be made in a range of absorptivities. An optimum optical density of about 9/(mu) ( 248 nm) which lowers photoresist swing curves to less than 2%, was chosen from optical modeling and etch rate measurements. The material offers spin bowl compatibility with common spin-
Edward K. Pavelchek, Manuel doCanto
openaire   +1 more source

Interfacial absorption of DUV coatings

SPIE Proceedings, 2001
Complicated dielectric coatings consist of a large number of layers and thus have many interfaces, that may contribute to the total absorption of the coatings. We examined this contribution of the interfaces using two different approaches. For the determination of the absorption of the first interface between the substrate and the coatings we varied ...
Oliver Apel, Michael Schulz-Grosser, Uwe Leinhos, Michael Kennedy, Klaus R. Mann, Rainer G. Schuhmann   +5 more
openaire   +1 more source

Characterization of advanced DUV photoresists

SPIE Proceedings, 1999
The first objective of this project was to characterize the lithographic performance of an advanced Acetal-based DUV resists. This resist is targeted for 0.25-0.18 micron geometries. The sensitivity of film thickness and uniformity to critical process parameters such as final dry spin time in the coater, soft bake time, soft bake temperature, method of
Murthy S. Krishna, Emir Gurer, Ed C. Lee, John W. Lewellen, Kevin M. Golden, John W. Salois, Gary E. Flores, Scott C. Wackerman, Reese M. Reynolds   +8 more
openaire   +1 more source

Development of AlGaN DUV-LED

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
Masamichi Ippommatsu, Akira Hirano, Isamu Akasaki, Hiroshi Amano   +3 more
openaire   +1 more source

Amine gradient process for DUV lithography

Polymer, 2001
Abstract Poly(acrylic acid-co-methyl acrylate) was synthesized as a base resin for over-coating materials. By adding l-proline as an amine source to the over-coating material, amine gradient could be useful for lithography. Using this amine gradient process, vertical pattern of 140 nm line/space could be obtained even though the light transmission of
J.-C Jung, M.-H Jung, G Lee, K.-H Baik
openaire   +1 more source

Optical DUV-lithography for high microstructures

Microsystem Technologies, 1996
A new technology called 3D UV-Microforming consisting of an advanced resist preparation process, a UV lithographic step, resist development, a moulding procedure by electrodeposition, and finally stripping and cleaning for finishing the structures was developed for application in microsystem technology.
A. Heuberger, B. Löchel
openaire   +1 more source

Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scanners

SPIE Proceedings, 2000
SEMICONDUCTOR300 was the first pilot production facility for 300mm wafers in the world. This company, a joint venture between Infineon Technologies and Motorola, is working to develop a manufacturable 300mm wafer tool set. The lithography tools include I-line steppers, a DUV stepper, and two DUV scanners.
Thorsten Schedel, Alain B. Charles, Dietmar Ganz, Steffen R. Hornig, Guenther Hraschan, Wolfram Koestler, John G. Maltabes, Karl E. Mautz, Thomas Metzdorf, Ralf Otto, Sebastian Schmidt, Ralf Schuster   +11 more
openaire   +1 more source