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Revision der Gattung Cyphonotus Duv
1894(Uploaded by Plazi from the Biodiversity Heritage Library) No abstract provided.
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KrF excimer lasers for DUV-lithography
SPIE Proceedings, 1993The paper presents the features of the Lambda Physik 248 LEX KrF DUV-Lithography laser for spectral performance, reliability, and system integration. The 248 LEX is based on Lambda Physik's series of `LAMBDA' industrial lasers. Data of 5 years field experience with the LAMBDA high power industrial lasers are used to discuss reliability of the laser in ...
Rainer Paetzel +2 more
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Introduction to FUV and DUV Spectroscopy
2015Recently, both far ultraviolet (FUV) and deep UV (DUV) spectroscopies have received keen interest as new spectroscopies because they offer novel possibilities for studying electronic structure and transition, selective molecular imaging, high resolution microscopy, as well as applications for photoelectric devices.
Yukihiro Ozaki +2 more
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Specular spectroscopic scatterometry in DUV lithography
SPIE Proceedings, 1999Scatterometry is a one of the few types of metrology that has true in-situ potential for deep submicron CD and profile analysis. To date, commercial prototypes have been used to establish scatterometry based on single wavelength, multiple incident angle inspection.
Xinhui Niu +4 more
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Excimer lasers for DUV lithography
Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), 1998Summary form only given. The use of KrF and ArF excimer lasers as exposure sources for deep ultraviolet (DUV) lithography is discussed. Driven by extreme demands on performance, these lasers continually push the state-of-the-art in excimer laser design. Past, present, and future performance characteristics for these lasers are presented.
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DUV synchrotron exposure station at CAMD
SPIE Proceedings, 1998ABSTRACT A new synchrotron radiation exposure station dedicated to deep-UV exposures has been installed atthe synchrotron light source at the Center for Advanced Microstructures and Devices (CAMD). Itcomplements the activities in synchrotron-based lithography including X-ray lithography, deep X-raylithography, and under way, ultra-deep X-ray ...
Chantal G. Khan Malek +4 more
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Highly absorbing ARC for DUV lithography
SPIE Proceedings, 1996The properties of a new anti-reflective coating for 248 nm lithography are described. It is formed by thermally cross-linking a spin-on organic coating, and has an absorbance greater than 12/micrometers. It is compatible with UVIIHS and APEX-E photoresists.
Edward K. Pavelchek +8 more
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Lithographic performance of recent DUV photoresists
SPIE Proceedings, 1998Commercially available photoresists from the major photoresist vendors are investigated using a PAS 5500/300 wafer stepper, a 31.1 mm diameter field size high throughput wafer stepper with variable NA capability up to 0.63. The critical dimension (CD) investigated is 0.25 micrometers and lower for dense and isolated lines and 0.25 micrometers for dense
Bob Streefkerk +2 more
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DUV laser lithography for photomask fabrication
SPIE Proceedings, 2003In the recent past significant work has been done to isolate and characterize suitable single layer Chemically Amplified Resist (CAR) systems for DUV printing applicable to photomask fabrication. This work is complicated by the inherent instability of most DUV CAR systems, particularly in air, showing unacceptable CD degradation over the normal ...
Curt A. Jackson +7 more
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