Results 1 to 10 of about 99,074 (198)

Directly seeding epitaxial growth of tungsten oxides/tungsten diselenide mixed-dimensional heterostructures with excellent optical properties [PDF]

iScience, 2023
Summary: Mixed-dimensional heterostructures have drawn significant attention due to their intriguing physical properties and potential applications in electronic and optoelectronic nanodevices. However, limited by the lattice matching, the preparation of
Xiang Chen, Yaqing Zhang, Xinxin Yue, Zhuanzhuan Huang, Lifu Zhang, Min Feng, Fang Liu, Cuntao Gao, Yuan Yan, Xuewen Fu   +9 more
doaj   +2 more sources

Visualizing the interfacial-layer-based epitaxial growth process toward organic core-shell architectures [PDF]

Nature Communications
Organic heterostructures (OHTs) with the desired geometry organization on micro/nanoscale have undergone rapid progress in nanoscience and nanotechnology.
Ming-Peng Zhuo, Xiao Wei, Yuan-Yuan Li, Ying-Li Shi, Guang-Peng He, Huixue Su, Ke-Qin Zhang, Jin-Ping Guan, Xue-Dong Wang, Yuchen Wu, Liang-Sheng Liao   +10 more
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Controlled formation of three-dimensional cavities during lateral epitaxial growth [PDF]

Nature Communications
Epitaxial growth is a fundamental step required to create devices for the semiconductor industry, enabling different materials to be combined in layers with precise control of strain and defect structure.
Yiwen Zhang, Baoming Wang, Changxu Miao, Haozhi Chai, Wei Hong, Frances M. Ross, Rui-Tao Wen   +6 more
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Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Crystals, 2022
Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root mean ...
Jiulong Wang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu   +6 more
doaj   +1 more source

Microstructure and mechanical properties of laser-assisted epitaxial growth of nickel-based single crystal superalloys

Journal of Materials Research and Technology, 2023
The effects of process parameters on the microstructures and properties of the laser-assisted epitaxial growth layer are of great significance for the repair of nickel-based single-crystal blades. This work investigated the microstructures and properties
Jinjun Xu, Jiayi Liu, Lihong Yu, Yang Zhan, Kun Gao, Zhipeng Zhou, Lan Huang, Qian Lei   +7 more
doaj   +1 more source

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Nature Communications, 2023
Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications.
Li Zhai, Sara T. Gebre, Bo Chen, Dan Xu, Junze Chen, Zijian Li, Yawei Liu, Hua Yang, Chongyi Ling, Yiyao Ge, Wei Zhai, Changsheng Chen, Lu Ma, Qinghua Zhang, Xuefei Li, Yujie Yan, Xinyu Huang, Lujiang Li, Zhiqiang Guan, Chen-Lei Tao, Zhiqi Huang, Hongyi Wang, Jinze Liang, Ye Zhu, Chun-Sing Lee, Peng Wang, Chunfeng Zhang, Lin Gu, Yonghua Du, Tianquan Lian, Hua Zhang, Xue-Jun Wu   +31 more
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Optimizing process for pulsed laser additive manufacturing of nickel-based single crystal superalloy

Materials Research Express, 2023
The relationship between pulsed laser processing parameters and epitaxial growth of alloy is essential to additive manufacturing technology in repairing and manufacturing nickel-based single crystal (SX) superalloys. In this paper, orthogonal experiments
Shiwei Ci, Jingjing Liang, Jinguo Li, Yizhou Zhou, Xiaofeng Sun, Zonghui Cheng   +5 more
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Direct Epitaxial Growth of Polar Hf_0.5Zr_0.5O₂ Films on Corundum

Nanomaterials, 2022
Single-phase epitaxial Hf0.5Zr0.5O2 films with non-centrosymmetric orthorhombic structure have been grown directly on electrode-free corundum (α-Al2O3) substrates by pulsed laser deposition.
Eduardo Barriuso, Panagiotis Koutsogiannis, David Serrate, Javier Herrero-Martín, Ricardo Jiménez, César Magén, Miguel Algueró, Pedro A. Algarabel, José A. Pardo   +8 more
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Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study

Advances in Condensed Matter Physics, 2022
First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface.
J. H. Camacho-García, Ma L. Ruiz-Peralta, G. Hernández-Cocoletzi, A. Bautista-Hernández, M. Salazar-Villanueva, A. Escobedo-Morales, E. Chigo-Anota, J. C. Moreno-Hernández   +7 more
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In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C [PDF]

, 1989
We report an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2 which was formed by codeposition of Co and Si near room temperature.
Lin, T. L., Nieh, C. W.
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