Results 91 to 100 of about 99,173 (297)

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

AIP Advances, 2016
The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh ...
Sangmo Koo, Hyunchul Jang, Sun-Wook Kim, Dae-Hong Ko   +3 more
doaj   +1 more source

Wafer bonding solution to epitaxial graphene - silicon integration

, 2013
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene ...
Berger, Claire, Bhattacharya, Swapan K, de Heer, Walt A., Dong, Rui, Guo, Zelei, Hankinson, John, Hu, Yike, Kunc, Jan, Palmer, James, Ruan, Ming   +9 more
core   +3 more sources

Observation of Relativistic Domain Wall Motion in Amorphous Ferrimagnets

Advanced Functional Materials, EarlyView.
Domain walls in ferrimagnets and antiferromagnets move as relativistic sine‐Gordon solitons, with the spin‐wave velocity setting their speed limit. Such relativistic domain‐wall motion is demonstrated in amorphous GdFeCo near angular momentum compensation, where current‐driven walls reach 90% of the 2 kms−1 spin‐wave speed, enabling ultrafast, device ...
Pietro Diona, Luca Maranzana, Sergey Artyukhin, Giacomo Sala   +3 more
wiley   +1 more source

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7x7) surfaces: Influence of short range order on the substrate

, 2010
Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM).
Anupam Roy, Argile, B.N. Dev, Baletto, Carriere, Chen, Chu, Fujita, Gavioli, Goswami, Goswami, Gotoh, Hall, Hanbucken, Hasegawa, Hollinger, Hur, Hur, Iback, Iwasaki, J. Ghatak, Jin, K. Bhattacharjee, Kastner, Lander, Le Lay, Li, Maeda, Marks, Muller, Nakayama, Nakayama, Nason, Nason, Neddermeyer, Nishimura, Novikov, Persat, Peyser, Ren, Roy, Roy, Sato, Schlier, Sekar, Shklyaev, Tabe, Tang, Venables, Wadayama, Wang, Williams, Zuo   +52 more
core   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Advanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter, Valerio Piazza, Pramod Ghimire, Anna Fontcuberta i Morral, Eli Sutter   +4 more
wiley   +1 more source

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

Nature Communications, 2020
Key properties of transition metal perovskite oxides are degraded after epitaxial growth on ferroelectric substrates due to lattice-mismatch strain. Here, the authors use epitaxial lift-off and transfer to overcome this problem and demonstrate electric ...
D. Pesquera, E. Khestanova, M. Ghidini, S. Zhang, A. P. Rooney, F. Maccherozzi, P. Riego, S. Farokhipoor, J. Kim, X. Moya, M. E. Vickers, N. A. Stelmashenko, S. J. Haigh, S. S. Dhesi, N. D. Mathur   +14 more
doaj   +1 more source

Temperature control and calibration issues in the growth, processing and characterization of electronic materials [PDF]

The temperature control and calibration issues encountered in the growth, processing, and characterization of electronic materials are summarized. The primary problem area is identified as temperature control during epitaxial materials growth.
Wilson, B. A.
core   +1 more source

Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

, 2015
Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC).
Feidenhans'l, R., Kim, Younghyun, Kjaergaard, M., Kraemer, S., Krogstrup, P., Lutchyn, R. M., Marcus, C. M., Nayak, C., Nichele, F., Pakrouski, K., Palmstrøm, C. J., Shabani, J., Stankevic, T., Suominen, H. J., Troyer, M.   +14 more
core   +1 more source

Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?

Advanced Functional Materials, EarlyView.
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy, Richard Ganser, Dong‐Gyu Kim, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Thomas Mikolajick, Susan Trolier‐McKinstry, Alfred Kersch, Uwe Schroeder   +9 more
wiley   +1 more source

Crystal orientation of epitaxial film deposited on silicon surface

Scientific Reports
Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials.
Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Daishi Shiojiri, Shigeo Yasuhara, Sumanta Kumar Sahoo, Musa Mutlu Can, Ruei Sung Yu, Kripasindhu Sardar, Masahiro Yoshimura, Masaki Azuma, Akifumi Matsuda, Mamoru Yoshimoto   +13 more
doaj   +1 more source