Results 121 to 130 of about 99,173 (297)
Advanced Materials, EarlyView.We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh +5 more
wiley +1 more source
Vapor phase epitaxy of cesium tin chloride perovskite films and quantum wells
Communications MaterialsEpitaxy has advanced the thin-film electronics field by enhancing many key features of semiconductors. While halide perovskites are performing well in photovoltaics, their potential for high-end electronics applications remains underexplored, and ...
Aungkan Sen, Kai Sun, Richard R. Lunt
doaj +1 more source
Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals
Advanced Materials, EarlyView.Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici +9 more
wiley +1 more source
Chemical–Mechanical Super-Polishing of Al2O3 (0001) Wafer for Epitaxial Purposes
CrystalsA super-polishing procedure was performed on the Al2O3 (0001) surface for epitaxial purposes. The roughness of the final polished surface was measured to be 0.16 nm using atomic force microscopy and X-ray reflectivity techniques.
Chih-Hao Lee, Chih-Hong Lee
doaj +1 more source
Spectral Tuning of Hyperbolic Shear Polaritons in Monoclinic Gallium Oxide via Isotopic Substitution
Advanced Materials, EarlyView.Spectral tuning of highly directional hyperbolic shear polaritons is realized via isotopic substitution of 16O to 18O in monoclinic β$\beta$‐phase gallium oxide. A red‐shift of almost 40 cm−1 is experimentally demonstrated with near‐field imaging, corroborated by the permittivity change extracted from far‐field experiments and density functional theory.
Giulia Carini +28 more
wiley +1 more source
Electron Channeling Contrast Imaging of Ferroelastic Domains
Advanced Materials, EarlyView.A simple scanning electron microscopy technique, electron channeling contrast imaging, unveils nanoscale ferroelastic domains and their coupling to functional properties in oxide heterostructures. The work demonstrates high‐resolution mapping of both surface and buried domains, broadening the experimental toolbox for ferroic and quantum oxide systems ...
Wei Peng +13 more
wiley +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
Advanced Materials, EarlyView.This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
Advanced Materials, EarlyView.Scalable bottom‐up fabrication of Fe3O4 nanodots on Nb:SrTiO3 using anodic alumina templates enables long‐range ordered arrays with diameters down to 30 nm. STEM highlights the epitaxial growth of Fe3O4 films on Nb:SrTiO3. Complementary polarized neutron reflectometry (PNR) and X‐ray magnetic circular dichroism (XMCD) measurements on continuous films ...
Yifan Xu +14 more
wiley +1 more source
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Advanced Materials, EarlyView.We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren +6 more
wiley +1 more source