Epitaxial growth and surface reconstruction of CrSb(0001) [PDF]
, 2019 Smooth CrSb(0001) films have been grown by molecular beam epitaxy on MnSb(0001) – GaAs(111) substrates. CrSb(0001) shows (2 × 2), triple domain (1 × 4) and (√3×√3)R30° reconstructed surfaces as well as a (1 × 1) phase. The dependence of reconstruction on
Aldous, James D. +2 more
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Defect free strain relaxation of microcrystals on mesoporous patterned silicon
Nature Communications, 2022 Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect free ...
Alexandre Heintz +9 more
doaj +1 more source
Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates
AIP Advances, 2023 We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films.
Jie Zhang +4 more
doaj +1 more source
Low-threshold room-temperature embedded heterostructure lasers [PDF]
, 1976 Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in ...
Gover, A. +3 more
core +1 more source
Research on silicon carbide epitaxial equipment technology
机车电传动, 2023 Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal
YUAN Fushun +3 more
doaj
Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)
Materials Research Letters, 2021 Epitaxial Cr2AlC MAX phase thin films were grown on MgO(111) and Al2O3(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr2AlC thin films on MgO (111) reveal phase purity, columnar growth, the epitaxial ...
Marc Stevens +5 more
doaj +1 more source
Crystals, 2023 Epitaxy is the process of crystallization of monocrystalline layers and nanostructures on a crystalline substrate. It allows for the crystallization of various semiconductor layers on a finite quantity of semiconductor substrates, like GaAs, InP, GaP ...
Ewa Dumiszewska +4 more
doaj +1 more source
Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth [PDF]
, 1989 The perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ~600 °C was measured at temperatures from 24 up to 650 °C. At 600 °C, the perpendicular x-ray strain is –0.86%, which is about the x-ray strain that a stress-free ...
Bai, Gang +4 more
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Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates [PDF]
, 2006 We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition (HWCVD).
Atwater, Harry A. +2 more
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Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
Crystals, 2023 In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo +7 more
doaj +1 more source