Results 221 to 230 of about 99,173 (297)
In this work, we propose a novel on‐chip microscale continuous droplet‐in‐flow synthesis (μ‐CDFS) that utilizes zwitterionic ligands to enable large‐scale preparation of perovskite nanocrystals (PNCs) with high emission efficiency and monodispersity.
Guangguang Huang +4 more
wiley +1 more source
Epitaxial Growth of Surface Perforations on Parallel Cylinders in Terraced Films of Block Copolymer/Homopolymer Blends. [PDF]
Sun YS +6 more
europepmc +1 more source
Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures
A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong +7 more
wiley +1 more source
On the epitaxial growth in ALD Co<sub>3</sub>O<sub>4</sub>- and NiO-based bilayers.
van Limpt RTM +3 more
europepmc +1 more source
Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition. [PDF]
Dhasiyan AK +6 more
europepmc +1 more source
This work maps and optimizes aerosol‐jet printing of PEDOT:PSS on flexible polyimide. By co‐tuning carrier and sheath gas flows, print speed, and solvent composition with surface activation, continuous, uniform microlines with sharp edges and minimal overspray are achieved.
Md Shariful Islam +2 more
wiley +1 more source
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis +13 more
wiley +1 more source
Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim +4 more
wiley +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics
A flipped electronically reconfigurable STO/LAO freestanding membrane is demonstrated and integrated with various host platforms via controlled transfer. Using ultra‐low‐voltage electron‐beam lithography, conductive nanostructures are created at the buried STO/LAO interface. This novel approach enables heterogeneous integration of flipped complex oxide
Ruiqi Sun +9 more
wiley +1 more source

