Results 31 to 40 of about 99,173 (297)

An epitaxial model for heterogeneous nucleation on potent substrates [PDF]

, 2012
© The Minerals, Metals & Materials Society and ASM International 2012In this article, we present an epitaxial model for heterogeneous nucleation on potent substrates.
A. Hashibon, A. Hashibon, A. Trampert, A.L. Greer, A.M. Bunn, B. Cantor, B.S. Murty, C. Amador, C.A.B. Ball, D. Hull, D. Turnbull, D.H. StJohn, D.H. StJohn, F.C. Frank, F.Y. Huang, G.P. Jones, G.P. Jones, H. Men, H.T. Li, J. Gibbs, J. Goldak, J. Tolle, J.A. Brammer, J.A. Dantzig, J.L. Smialek, J.W. Cahn, J.W. Matthews, J.W. Matthews, K.F. Kelton, M. Johnsson, M. Ohring, M. Qian, M. Volmer, M.A. Easton, M.A. Easton, M.A. Easton, M.J. Regan, M.X. Zhang, M.X. Zhang, O.G. Shpyrko, O.G. Shpyrko, O.M. Magnussen, P. Schumacher, S. Luryi, S.C. Jain, S.H. Oh, T. Ito, T.E. Quested, T.E. Quested, W.T. Kim, Y. Tamura, Y.H. Lo, Zhongyun Fan   +52 more
core   +1 more source

Island Distance in One-Dimensional Epitaxial Growth

, 1998
The typical island distance $\ell$ in submonlayer epitaxial growth depends on the growth conditions via an exponent $\gamma$. This exponent is known to depend on the substrate dimensionality, the dimension of the islands, and the size $i^*$ of the ...
Kallabis, Harald, Krapivsky, Paul L., Wolf, Dietrich E.   +2 more
core   +1 more source

High-throughput synthesis of thermoelectric Ca$_3$Co$_4$O$_9$ films [PDF]

, 2013
Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to improved ...
Chateigner, D., Hebert, S., Lebedev, O. I., Pravarthana, D., Prellier, W., Salvador, P. A.   +5 more
core   +3 more sources

(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD

Journal of Materiomics
In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed.
Yunlong He, Yang Liu, Xiaoli Lu, Zhan Wang, Xianqiang Song, Ying Zhou, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +8 more
doaj   +1 more source

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Nanomaterials, 2022
Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology ...
Yong Du, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang, Henry H. Radamson   +8 more
doaj   +1 more source

Kinetically-controlled thin-film growth of layered $\beta$- and $\gamma-$Na$_{x}$CoO$_{2}$ cobaltate

, 2005
We report growth characteristics of epitaxial $\beta$-Na$_{0.6}$CoO$_{2}$ and $\gamma$-Na$_{0.7}$CoO$_{2}$ thin films on (001) sapphire substrates grown by pulsed-laser deposition.
Cho, J. H., Kim, Bog G., Son, J. Y.
core   +1 more source

Ab Initio Study on 3D Anisotropic Ferroelectric Switching Mechanism and Coercive Field in HfO2 and ZrO2

Advanced Functional Materials, EarlyView.
This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, Yunjae Kim, Cheol Seong Hwang, Jung‐Hae Choi   +6 more
wiley   +1 more source

Selective growth of perovskite oxides on SrTiO3 (001) by control of surface reconstructions

, 2011
We report surface reconstruction (RC)-dependent growths of SrTiO3 and SrVO3 on a SrTiO3 (001) surface with two different coexisting surface RCs, namely (2x1) and c(6x2).
Chang, Young Jun, Noh, Tae Won, Phark, Soo-hyon   +2 more
core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Research on the effect of remelting on the epitaxial growth process of single crystal superalloy

Journal of Materials Research and Technology
In this paper, the remelting process is applied to Laser Directed Energy Deposition (L-DED) to repair single crystal superalloys. The main formation modes of stray grains in single crystal epitaxial growth were analyzed, and the inhibitory effect of ...
Gengshuo Liu, Shujie Liu, Tinghong Hou, jinyan Hu, Guanqun Du, Shuai Lv, Yu Wang, Weiwei Liu, Tao Li   +8 more
doaj   +1 more source