Results 41 to 50 of about 99,173 (297)
Synchrotron Radiation for Quantum Technology
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
Atomic Size Misfit for Electrocatalytic Small Molecule Activation
This review explores the application and mechanisms of atomic size misfit in catalysis for small molecule activation, focusing on how structural defects and electronic properties can effectively lower the energy barriers of chemical bonds in molecules like H2O, CO2, and N2.
Ping Hong +3 more
wiley +1 more source
In this article, we highlight the epitaxial growth of non-polar a-plane ZnO and aluminium-doped ZnO using the low-cost, non-vacuum and highly up-scalable intermittent spray pyrolysis technique.
Cerine Treesa Russel +2 more
doaj +1 more source
Antimony doping of Si layers grown by solid-phase epitaxy [PDF]
We report here that layers of Si formed by solid-phase epitaxial growth (SPEG) can be doped intentionally. The sample consists initially of an upper layer of amorphous Si (~1 µm thick), a very thin intermediate layer of Sb (nominally 5 Å), and a thin ...
Blattner, Richard J. +7 more
core +1 more source
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida +16 more
wiley +1 more source
To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer ...
Yicheng Pei +5 more
doaj +1 more source
MXene dervied CoFe composites show increased initial Oxygen Evolution Reaction (OER) activity compared to the pure CoFe and MXene in an Anion Exchange Membrane device. Vanadium vacancies in the MXene plays a role in increased OER activity and hinders Fe leaching in the AEM device over using the pure V2C MXene as a support material for the CoFe ...
Can Kaplan +16 more
wiley +1 more source
Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry.
SLAWOMIR GULKOWSKI
doaj +1 more source
Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
ScAlN has garnered substantial attention for its robust piezoelectric and ferroelectric properties, holding promise for diverse electronic device applications.
Atsushi Kobayashi +5 more
doaj +1 more source
Structural evolution of Re (0001) thin films grown on Nb (110) surfaces by molecular beam epitaxy
The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy.
Welander, Paul B.
core +1 more source

