Results 71 to 80 of about 99,173 (297)

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy

Advanced Functional Materials, EarlyView.
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch, Sergio L. A. Mello, Gilberto Rodrigues‐Junior, Sukarno O. Ferreira, Marcelo M. Sant'Anna, Benjamin R. Salles, Mateus T. Souza, Sérgio L. Morelhão, Maybi F. Sampaio, Bráulio S. Archanjo, Leonarde N. Rodrigues   +10 more
wiley   +1 more source

Self-Organized Ni Nanocrystal Embedded in BaTiO₃ Epitaxial Film

Nanoscale Research Letters, 2010
Ni nanocrystals (NCs) were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed.
Ge FF, Wang XM, Cao LH, Li J, Zhang HL, Wang HP, Dai Y, Wang HB, Shen J, Wu WD   +9 more
doaj   +1 more source

Effect of Dopants on Epitaxial Growth of Silicon Nanowires

Nanomaterials and Nanotechnology, 2014
We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates.
Sung Hwan Chung, Sarath Ramadurgam, Chen Yang   +2 more
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Logarithmic Clustering in Submonolayer Epitaxial Growth

, 1997
We investigate submonolayer epitaxial growth with a fixed monomer flux and irreversible aggregation of adatom islands due to their effective diffusion.
Krapivsky, P. L., Mendes, J. F. F., Redner, S.   +2 more
core   +2 more sources

Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study

Advanced Functional Materials, EarlyView.
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere, Yong Beom Kim, Colin Gilgenbach, James M. LeBeau, WooChul Jung, Harry L. Tuller   +5 more
wiley   +1 more source

Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers

JPhys Materials
This study explores the influence of different hydrocarbons, methane and propane, on the properties of 4H-SiC epitaxial layers grown by chloride-based chemical vapor deposition.
Misagh Ghezellou, Erlend Lemva Ousdal, Marianne E Bathen, Lasse Vines, Jawad Ul-Hassan   +4 more
doaj   +1 more source

Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

, 2009
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of ...
A. Mauger, B. Coloru, C. F. Chang, C. Schüßler-Langeheine, C. T. Chen, G. M. Roesler, Jr., H. H. Hsieh, H. Kierspel, H.-J. Lin, K. Lee, L. H. Tjeng, M. Moretti Sala, N. Hollmann, R. Sutarto, S. G. Altendorf, T. Haupricht, V. E. Henrich, Z. Hu   +17 more
core   +1 more source

Growth of Millimeter‐Sized BaTaO2N Single Crystals by an NH3‐Assisted BaCl2 Flux Method

Advanced Functional Materials, EarlyView.
Millimeter‐sized BaTaO2N single crystals are successfully grown from a BaCl2 flux under NH3 flow. Their comprehensive characterization, including dielectric properties, is demonstrated, and the possible growth mechanisms are discussed. Abstract Perovskite‐type oxynitrides have attracted considerable attention due to their excellent photocatalytic ...
Ginji Harada, Mirabbos Hojamberdiev, Hajime Wagata   +2 more
wiley   +1 more source

Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics

APL Materials, 2020
Motivated by the exciting properties of metal halide perovskites in photovoltaic applications, there is an evolving need to further explore the limitations of this class of materials in broader fields and high end optoelectronics, which requires better ...
Lili Wang, Isaac King, Pei Chen, Matthew Bates, Richard R. Lunt   +4 more
doaj   +1 more source