Results 101 to 110 of about 88,368 (276)

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

Advanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun, Min Gyeong Shin, Uje Choi, Jieun Yeon, Jae Joon Kim, Yangjin Lee, Kwanpyo Kim   +6 more
wiley   +1 more source

Research on silicon carbide epitaxial equipment technology

机车电传动, 2023
Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal
YUAN Fushun, DENG Xiaojun, LI Qingyan, WANG Shi   +3 more
doaj  

Extensive Review of Materials for Next‐Generation Transparent Batteries and Their Design Strategies

Advanced Functional Materials, EarlyView.
Review explores emerging materials and design strategies for transparent batteries, examining electrodes, electrolytes, separators, and device architectures optimized for high electrochemical performance, mechanical flexibility, and optical transparency.
Atul Kumar Mishra, Shuvaraj Ghosh, Malkeshkumar Patel, Sourov Hossain, Ju‐Hyung Yun, Joondong Kim   +5 more
wiley   +1 more source

Engineering Relative Spatial Structure of Dual Atomic Sites with Asymmetric Coordination for High‐Performance Hydrogen Evolution Activity

Advanced Functional Materials, EarlyView.
Dual‐atom catalysts featuring varying spatial configurations of metal sites (Pt1Fe1 DACs) are employed to systematically investigate the influence of spatial arrangements on the electronic structure and catalytic activity of active sites. Notably, the 3D asymmetric Pt1Fe1‐TAC dimer, featuring strong interatomic interactions, demonstrates superior ...
Yi Guan, Xiaozhang Yao, Chuang Xue, Zhongxin Song, Xiangzhong Ren, Tsun‐Kong Sham, Li‐Min Liu, Lei Zhang, Xueliang Sun   +8 more
wiley   +1 more source

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Micromachines
To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer ...
Yicheng Pei, Weilong Yuan, Yunkai Li, Ning Guo, Xiuhai Zhang, Xingfang Liu   +5 more
doaj   +1 more source

High-k perovskite gate oxide BaHfO3

APL Materials, 2017
We have investigated epitaxial BaHfO3 as a high-k perovskite dielectric. From x-ray diffraction measurement, we confirmed the epitaxial growth of BaHfO3 on BaSnO3 and MgO.
Young Mo Kim, Chulkwon Park, Taewoo Ha, Useong Kim, Namwook Kim, Juyeon Shin, Youjung Kim, Jaejun Yu, Jae Hoon Kim, Kookrin Char   +9 more
doaj   +1 more source

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Sensors, 2017
The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated ...
Chang-Ju Lee, Chul-Ho Won, Jung-Hee Lee, Sung-Ho Hahm, Hongsik Park   +4 more
doaj   +1 more source

Observation of Relativistic Domain Wall Motion in Amorphous Ferrimagnets

Advanced Functional Materials, EarlyView.
Domain walls in ferrimagnets and antiferromagnets move as relativistic sine‐Gordon solitons, with the spin‐wave velocity setting their speed limit. Such relativistic domain‐wall motion is demonstrated in amorphous GdFeCo near angular momentum compensation, where current‐driven walls reach 90% of the 2 kms−1 spin‐wave speed, enabling ultrafast, device ...
Pietro Diona, Luca Maranzana, Sergey Artyukhin, Giacomo Sala   +3 more
wiley   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

Advanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter, Valerio Piazza, Pramod Ghimire, Anna Fontcuberta i Morral, Eli Sutter   +4 more
wiley   +1 more source

Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?

Advanced Functional Materials, EarlyView.
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy, Richard Ganser, Dong‐Gyu Kim, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Thomas Mikolajick, Susan Trolier‐McKinstry, Alfred Kersch, Uwe Schroeder   +9 more
wiley   +1 more source