Results 131 to 140 of about 88,368 (276)

Resonant Interlayer Coupling in NbSe2‐Graphite Epitaxial Moiré Superlattices

Advanced Materials, EarlyView.
Combining angle‐resolved photoemission spectroscopy and density functional theory derived calculations, this work reveals strong interlayer coupling and moiré replicas of the graphite π states in molecular‐beam epitaxy grown van der Waals heterostructures of monolayer‐NbSe2/graphite, with implications for its collective phases that form. Abstract Moiré
Shu Mo, Ksenija Kovalenka, Sebastian Buchberger, Bruno K. Saika, Anugrah Azhar, Akhil Rajan, Andela Zivanovic, Yu‐Chi Yao, Rodion V. Belosludov, Matthew D. Watson, M Saeed Bahramy, Phil D.C. King   +11 more
wiley   +1 more source

Review of Thin Lithium Metal Battery Anode Fabrication – Microstructure – Electrochemistry Relations

Advanced Materials, EarlyView.
Thin, lightweight lithium‐metal anodes are pivotal for practical high‐energy batteries. This review surveys processing routes that convert diverse Li precursors, e.g., ingots, melts, solutions, and vapor, into Li‐rich foils with controlled thickness, areal density, and tailored functionality.
Yuhang Hu, Zidong Chen, Yixian Wang, Haorui Hou, Bingcheng Chen, David Mitlin, Wei Liu   +6 more
wiley   +1 more source

(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD

Journal of Materiomics
In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed.
Yunlong He, Yang Liu, Xiaoli Lu, Zhan Wang, Xianqiang Song, Ying Zhou, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +8 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Epitaxial integration of perovskite based double-gate field effect transistor with silicon

APL Materials
Silicon-based semiconductors have driven significant advancements following Moore’s law but are now approaching the physical limits. To overcome these challenges, integrating new materials with silicon is emerging as a promising alternative. In this work,
Seonghyeon Kim, Tatiana Kuznetsova, Juhan Kim, Jongkyoung Ko, Jihoon Seo, Roman Engel-Herbert, Kookrin Char   +6 more
doaj   +1 more source

Atomic Layer Epitaxy

Atomic Layer Epitaxy
identifier:oai:t2r2.star.titech.ac.jp ...
openaire  

Non‐Destructive Laser Nanopatterning of Superconducting Heterostructures in Topological Sn Thin Films

Advanced Materials, EarlyView.
We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh, Takahiro Saeki, Keita Ishihara, Daiki Nishigaki, Hideki Maki, Masaaki Tanaka   +5 more
wiley   +1 more source

Magnetoconductivity and Terahertz Response of a HgCdTe Epitaxial Layer. [PDF]

Sensors (Basel), 2018
Yavorskiy D, Karpierz K, Baj M, Bąk MM, Mikhailov NN, Dvoretsky SA, Gavrilenko VI, Knap W, Teppe F, Usakowski J.   +9 more
europepmc   +1 more source

Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals

Advanced Materials, EarlyView.
Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici, Giorgio Pettinari, Michela Fratini, Luisa Barba, Simone Birindelli, Gaetano Campi, Silvia Rubini, Tobias Schülli, Mario Capizzi, Antonio Polimeni   +9 more
wiley   +1 more source

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer. [PDF]

Micromachines (Basel), 2019
Li Y, Liang T, Lei C, Hong Y, Li W, Li Z, Ghaffar A, Li Q, Xiong J.   +8 more
europepmc   +1 more source