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Efficient FeFET Crossbar Accelerator for Binary Neural Networks

2020 IEEE 31st International Conference on Application-specific Systems, Architectures and Processors (ASAP), 2020
This paper presents a novel ferroelectric field-effect transistor (FeFET) in-memory computing architecture dedicated to accelerate Binary Neural Networks (BNNs). We present in-memory convolution, batch normalization and dense layer processing through a grid of small crossbars with reduced unit size, which enables multiple bit operation and value ...
Taha Soliman   +7 more
openaire   +2 more sources

Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs

2020
Controlled-polarization-type ferroelectric-gate thin film transistors (FeTFTs), which utilize the interaction between the polarizations of a polar semiconductor and a ferroelectric layer, have been proposed. When the polarizations align head-to-head, electrons that correspond to the sum of the polarizations are induced at the interface between the ...
Norifumi Fujimura, Takeshi Yoshimura
openaire   +1 more source

Retention and Endurance of FeFET Memory Cells

2019 IEEE 11th International Memory Workshop (IMW), 2019
Despite decades of R&D, the single-transistor (1-T) memory cell based on ferroelectric-gated Field-Effect-Transistor (FeFET) has failed to commercialize as of this writing, largely due to the inadequate retention time. The recent advent of the HfO 2 -based ferroelectrics, however, promises to change that.
T.P. Ma, Nanbo Gong
openaire   +1 more source

Reconfiguring the Mux-Based Arbiter PUF using FeFETs

2021 22nd International Symposium on Quality Electronic Design (ISQED), 2021
Physical Unclonable Functions (PUFs) are lightweight security primitives that exploit complex manufacturing variations in integrated circuits to extract secret keys. It is well-established that the unique keys generated by the mux-based arbiter PUF can be predicted accurately using logistic regression (LR), provided a set of challenge-response pairs ...
Srinivasa Ramanujam, Wayne P. Burleson
openaire   +1 more source

FeMPIM: A FeFET-Based Multifunctional Processing-in-Memory Cell

open access: yesIEEE Transactions on Circuits and Systems II: Express Briefs
International audienceThe Von-Neumann memory wall bottleneck that keeps expanding is mainly caused by the frequent data transfer between the main memory and the processor.
Aibin Yan   +7 more
openaire   +2 more sources

Analysis and Characterization of Defects in FeFETs

2023 IEEE International Test Conference (ITC), 2023
Dhruv Thapar   +4 more
openaire   +1 more source

Hardware Emulation of FeFET On FPGA

2022 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 2022
Paul-Antoine, Matrangolo   +3 more
openaire   +2 more sources

Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

2015 IEEE International Electron Devices Meeting (IEDM), 2015
Recent discovery of ferroelectricity in HfO2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile memory (NVM) cells [1]. However, such small devices are inevitably sensible to the granularity of the polycrystalline gate oxide film.
H. Mulaosmanovic   +18 more
openaire   +1 more source

Split-Gate FeFET (SG-FeFET) with Dynamic Memory Window Modulation for Non-Volatile Memory and Neuromorphic Applications

2019 Symposium on VLSI Technology, 2019
In this work, we propose a novel split-gate FeFET (SG-FeFET) with two separate external gates to dynamically modulate the memory window (MW) for non-volatile memory and neuromorphic applications. During read operation, only one gate is turned on to decrease the area ratio $(\text{A}_{\text{FE}}/\text{A}_{\text{IL}})$ of ferroelectric layer to ...
Vita Pi-Ho Hu   +8 more
openaire   +1 more source

FeFET-Based In-Memory Hyperdimensional Encoding Design

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2023
Qingrong Huang   +5 more
openaire   +2 more sources

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