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A Compact Model of Ferroelectric Field-Effect Transistor [PDF]

IEEE Electron Device Letters, 2022
In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET Model (BSIM), a standard SPICE MOSFET model.
Sayeef Salahuddin, Chien-Ting Tung, Chenming Hu   +2 more
exaly   +2 more sources

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Vertical Organic Ferroelectric Field Effect Transistor (VO-FeFET) for Low Threshold Voltage and High On/Off Current Ratio

Science of Advanced Materials, 2019
Haya Alhummiany, Azzuliani Supangat
openaire   +3 more sources

Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation

Solid-State Electronics
Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyungju Noh, Tae-Hyeon Kim, Sihyun Kim, Sangwan Kim   +6 more
openaire   +3 more sources

Write Bias Scheme Optimization of Ferroelectric Field-Effect-Transistor (FeFET) Synapse for Accurate On-chip Training

2024 21st International SoC Design Conference (ISOCC)
Seungmin Kang, Sangwan Kim, Sihyun Kim
openaire   +4 more sources

Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs

2020
Controlled-polarization-type ferroelectric-gate thin film transistors (FeTFTs), which utilize the interaction between the polarizations of a polar semiconductor and a ferroelectric layer, have been proposed. When the polarizations align head-to-head, electrons that correspond to the sum of the polarizations are induced at the interface between the ...
Norifumi Fujimura, Takeshi Yoshimura
openaire   +1 more source

Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Materials Today Communications, 2023
J. Ajayan, P. Mohankumar, D. Nirmal, L.M.I. Leo Joseph, Sandip Bhattacharya, S. Sreejith, Sreedhar Kollem, Shashank Rebelli, Shubham Tayal, B. Mounika   +9 more
openaire   +1 more source

A simulation study about the memory operation of 3D-stacked capacitor-less 1T DRAM cells based on ferroelectric field-effect transistors (FeFETs)

2023 20th International SoC Design Conference (ISOCC), 2023
Taegun Kim, Dong Keun Lee, Sihyun Kim, Sangwan Kim   +3 more
openaire   +1 more source

Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor

Nano Letters, 2023
Eilam Yalon, Halid Mulaosmanovic, Mor Mordechai Dahan   +2 more
exaly  

Reliability Optimization in Hafnium Oxide Based Ferroelectric Field-Effect Transistors (FeFETs)

2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Kechao Tang, Yuejia Zhou, Zhongxin Liang, Ru Huang   +3 more
openaire   +1 more source

Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

IEEE Electron Device Letters, 2021
Dae Woong, Sangwan Kim, Manh-Cuong Nguyen   +2 more
exaly