Results 171 to 180 of about 553 (192)

Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation

Solid-State Electronics
Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyungju Noh, Tae-Hyeon Kim, Sihyun Kim, Sangwan Kim   +6 more
openaire   +3 more sources

Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs

2020
Controlled-polarization-type ferroelectric-gate thin film transistors (FeTFTs), which utilize the interaction between the polarizations of a polar semiconductor and a ferroelectric layer, have been proposed. When the polarizations align head-to-head, electrons that correspond to the sum of the polarizations are induced at the interface between the ...
Norifumi Fujimura, Takeshi Yoshimura
openaire   +1 more source

Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Materials Today Communications, 2023
J. Ajayan, P. Mohankumar, D. Nirmal, L.M.I. Leo Joseph, Sandip Bhattacharya, S. Sreejith, Sreedhar Kollem, Shashank Rebelli, Shubham Tayal, B. Mounika   +9 more
openaire   +1 more source

A simulation study about the memory operation of 3D-stacked capacitor-less 1T DRAM cells based on ferroelectric field-effect transistors (FeFETs)

2023 20th International SoC Design Conference (ISOCC), 2023
Taegun Kim, Dong Keun Lee, Sihyun Kim, Sangwan Kim   +3 more
openaire   +1 more source

Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor

Nano Letters, 2023
Mor M Dahan, Halid Mulaosmanovic, Stefan Dunkel   +2 more
exaly  

Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory

IEEE Electron Device Letters, 2021
Munhyeon Kim, Kitae Lee, Sangwan Kim
exaly  

A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

IEEE Transactions on Electron Devices, 2023
Xiaoqing Sun, Junshuai Chai, Fengbin Tian   +2 more
exaly  

Reliability Optimization in Hafnium Oxide Based Ferroelectric Field-Effect Transistors (FeFETs)

2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Kechao Tang, Yuejia Zhou, Zhongxin Liang, Ru Huang   +3 more
openaire   +1 more source

Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel

IEEE Electron Device Letters, 2020
Kitae Lee, Jong-Ho Bae, Sangwan Kim
exaly  

Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

IEEE Electron Device Letters, 2021
Manh-Cuong Nguyen, Sangwan Kim, Kitae Lee   +2 more
exaly