Results 181 to 190 of about 553 (192)
Some of the next articles are maybe not open access.
2024 21st International SoC Design Conference (ISOCC)
Seungmin Kang, Sangwan Kim, Sihyun Kim
openaire +1 more source
Seungmin Kang, Sangwan Kim, Sihyun Kim
openaire +1 more source
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
IEEE Transactions on Electron Devices, 2018Tarek Ali +2 more
exaly
A Retention Model for Ferroelectric-Gate Field-Effect Transistor
IEEE Transactions on Electron Devices, 2011Xiangli Zhong +2 more
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Modeling a Common-Source Amplifier Using a Ferroelectric Transistor
Integrated Ferroelectrics, 2011Rana Sayyah, Todd C Macleod
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FERROELECTRIC FIELD-EFFECT TRANSISTOR DIFFERENTIAL AMPLIFIER CIRCUIT ANALYSIS
Integrated Ferroelectrics, 2009Todd C Macleod
exaly

