Results 241 to 250 of about 9,207 (319)

55.4 GHz Bulk Acoustic Resonator in Thin-Film Scandium Aluminum Nitride

IUS, 2023
This study describes a sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonator (FBAR) at 55.4 GHz. The resonator leverages the third-order symmetric (S3) mode in 37 nm Al on 85 nm Sc0.3Al0.7N on a 37 nm Al film stack, enabled by a ...
Sinwoo Cho, Omar A. Barrera, Pietro Simeoni, Jack Kramer, V. Chulukhadze, Wen‐Sheng Zhao, Ruochen Lu   +6 more
semanticscholar   +1 more source

A Manufacturable AlScN Periodically Polarized Piezoelectric Film Bulk Acoustic Wave Resonator (AlScN P3F BAW) Operating in Overtone Mode at X and Ku Band

Intelligent Memory Systems, 2023
This paper reports a manufacturable, Periodically Polarized Piezoelectric Film (P3F) Bulk Acoustic Wave (BAW) resonator using Aluminum Scandium Nitride (AlScN) materials operating in overtone mode at X and Ku band.
R. Vetury, Abhay S. Kochhar, J. Leathersich, C. Moe, M. Winters, J. Shealy, R. Olsson   +6 more
semanticscholar   +1 more source

Aluminum Nitride Based Film Bulk Acoustic Resonator With Anchor Column Structure

Journal of microelectromechanical systems, 2023
In order to reduce the lateral acoustic energy loss of thin film bulk acoustic resonators (FBARs), the trench structure for FBAR is generally designed to block the leakage of acoustic wave and help improving the $Q$ -factor.
Yuanhang Qu, Xiyu Gu, Yang Zou, Zhiwei Wen, Yao Cai, B. Soon, Yan Liu, Chengliang Sun   +7 more
semanticscholar   +1 more source

Film bulk acoustic resonator

The Journal of the Acoustical Society of America, 2006
A film bulk acoustic resonator comprises a substrate (12) of a single silicon crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric multilayer structure (14) formed on the base film (13).
  +4 more sources

Resonant Magnetometer for Ultralow Magnetic Field Detection by Integrating Magnetoelastic Membrane on Film Bulk Acoustic Resonator

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2022
Here, we report on a composite nanomechanical resonant magnetometer with magnetoelastic thin film integrated on the surface of a film bulk acoustic resonator (FBAR).
Cong Chen, L. Bai, J. Zhang, Lulu Tian, Quanxin Zhou, Hong Zhou, Dongxiao Li, X. Mu   +7 more
semanticscholar   +1 more source

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe80Ga20 anisotropic ΔE effect

Journal of Physics D: Applied Physics, 2021
With the increasing application of personal navigation systems in consumer electronics, the demand for multi-axis magnetic sensors based on MEMS is growing.
Xiaofan Yun, Wenkui Lin, Rui Hu, Xiaoyi Wang, Z. Zeng, Xinping Zhang, Baoshun Zhang   +6 more
semanticscholar   +1 more source

Application of film bulk acoustic resonators

1992 IEEE Microwave Symposium Digest MTT-S, 2003
Multipole film bulk acoustic resonator (FBAR) bandpass filters are being designed and fabricated on various substrates, including silicon and GaAs. Capable performance has been demonstrated for the large number of system insertions within the low microwave (1-3 GHz) range.
S. Horwitz, C. Milton
openaire   +1 more source

4.2 GHz LiNbO3 Film Bulk Acoustic Resonator

IUS, 2021
We have designed and fabricated LiNbO3 Film Bulk Acoustic Resonators operating around 4.2 GHz, suitable for C-band filters, with various bandwidths (60, 170, 300 and 500 MHz).
M. Bousquet, P. Perreau, A. Joulie, F. Delaguillaumie, C. Maeder-Pachurka, G. Castellan, Grégory Envedi, J. Delprato, F. Mazen, A. Reinhardt, I. Huyet, T. Laroche, A. Clairet, S. Ballandras   +13 more
semanticscholar   +1 more source

Mercuric Ion Sensing by a Film Bulk Acoustic Resonator

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2007
This paper describes a film bulk acoustic resonator (FBAR) mass sensor for detecting Hg2+ ion in water with excellent sensitivity and selectivity. When a thin Au film was deposited on the surface of an FBAR, the resonant frequency shifted to a lower value when the film was exposed to Hg2+ in aqueous solution. The FBAR sensor detected as low as 10(-9) M
Hao, Zhang, Mong S, Marma, Eun Sok, Kim, Charles E, McKenna, Mark E, Thompson   +4 more
openaire   +2 more sources

MIMO multiplexer based on film bulk acoustic resonator

IEEE Transactions on Consumer Electronics, 2010
A miniature multiplexer based on Film Bulk Acoustic Resonator (FBAR) is designed for Multiple-Input Multiple-Output (MIMO) terminal combined 1900 MHz PCS duplexer with 800 MHz Cellular duplexer in this paper. FBAR multiplexer is simulated based on a new FBAR model which combines Mason equivalent circuit model with parasitics model.
Huijin Zhang, Shurong Dong, Weiwei Chen, Yan Han 0005   +3 more
openaire   +1 more source