Results 271 to 280 of about 9,207 (319)
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Wave propagation in piezoelectric layered structure of film bulk acoustic resonator
Proceedings of the 2014 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications, 2014In this paper, we studied the wave propagation in a piezoelectric layered plate consisting of a piezoelectric thin film on an electroded elastic substrate with or without a driving electrode. Both plane-strain and anti-plane waves were taken into account for the sake of completeness.
Feng, Zhu, Zheng-Hua, Qian, Bin, Wang
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Dual-mode thin film bulk acoustic wave resonator and filter
, 2020Bulk acoustic wave (BAW) filters have been extensively used in consumer products for mobile communication systems due to their high performance and a standard CMOS compatible integration process.
Yang Zou +6 more
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Electrical Frequency Tuning of Film Bulk Acoustic Resonator
Journal of Microelectromechanical Systems, 2007This paper describes the design, fabrication, and measurement of an electrically tunable film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic microelectromechanical systems actuator. Around 1.47% tuning of the series resonant frequency ( Deltaf cong 22.5 MHz) at 1.5 GHz is experimentally obtained with an ...
Pang, Wei +4 more
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Film bulk acoustic resonator (FBAR) device
The Journal of the Acoustical Society of America, 2005Disclosed are a film bulk acoustic resonator (FBAR) device and a method for fabricating the film bulk acoustic resonator (FBAR) device. The film bulk acoustic resonator (FBAR) device comprises a membrane layer having a plurality of active regions and provides different resonant frequencies by providing different thicknesses of the active regions of ...
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Magnetoelectric GaN film bulk acoustic wave resonator
2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019This paper presents a novel magnetoelectric GaN film bulk acoustic resonator (FBAR). The device integrates a 750 nm piezoelectric GaN layer with Molybdenum electrodes with a magnetostrictive Nickel layer, separated by 50 nm of silicon nitride. The FBAR is fabricated on a 1.2 × 1.2 mm2GaN membrane released by micromachining of a high-resistivity silicon
Alina-Cristina Bunea +5 more
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Lithium niobate film bulk acoustic wave resonator for sub-6 GHz filters
IUS, 2020In this work, Film Bulk Acoustic Resonators (FBAR) based on 250 nm-thick Y+163°-cut LiNbO3 films have been fabricated using a layer transfer process (4-inch) including patterned bottom electrodes and a sacrificial layer cavity.
M. Bousquet +11 more
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A new model for film bulk acoustic wave resonators
Chinese Physics B, 2014Based on cavity resonance and sandwich composite plate theory, this paper presents a universal three-dimensional (3D) theoretical model for frequency dispersion characterization and displacement profile shapes of the film bulk acoustic resonator (FBARs). This model provides results of FBAR excited thickness-extensional and flexure modes, and the result
Yu-Jin Li, Xiu-Hua Yuan
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Highly Tunable Film Bulk Acoustic Wave Resonator Based on Pt/ZnO/Fe65Co35 Thin Films
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2020We have developed a highly tunable film bulk acoustic wave resonator (TFBAR) using magnetostrictive (MS) Fe65Co35 thin films in acoustic layer stack. The resonator acoustic layer stack consists of Pt/ZnO/Fe65Co35 layers to tune the devices.
Jitendra Singh, Ajay Kumar, Mahesh Kumar
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A surface micromachined tunable film bulk acoustic resonator
SPIE Proceedings, 2004This paper reports on the design, modeling, fabrication and measurement of a novel-structured film bulk acoustic resonator (FBAR) that allows frequency tuning by MEMS actuation. FBAR's are micromachined frequency controlling devices working in RF regime.
Wanling Pan +3 more
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Tunable Resonator Using Film Bulk Acoustic Resonator (Fbar)
The Journal of the Acoustical Society of America, 2011A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR.
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