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Study on the Mechanism of Electrochemical Anodization for the Fixed-Abrasive Polishing of 4H-SiC
ECS Journal of Solid State Science and TechnologySilicon carbide (SiC), as a core material for third-generation semiconductors, yet its extreme hardness and chemical inertness present significant challenges for polishing. This study investigated the mechanism of electrochemical anodic oxidation on 4H-SiC and analyzed the effects of electrolyte type, concentration, and potential ...
Lingwei Wu +7 more
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Modeling of chemical mechanical polishing using fixed abrasive technology
2001Chemical Mechanical Polishing (CMP) is conventionally carried out using abrasive slurry and a polishing pad. An alternative process is the "fixed abrasive" polish. Existing models, which accurately predict oxide thickness variations across a chip for the conventional CMP process, have not previously been tested for the fixed abrasive process.
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A Study of Nano-Polishing of Injection Molds Using a Fixed Abrasive Pad
Key Engineering Materials, 2003Jae Young Choi +4 more
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International Journal of Precision Engineering and Manufacturing, 2013
Z W Zhong, Yebing Tian, Zhong Zhaowei
exaly
Z W Zhong, Yebing Tian, Zhong Zhaowei
exaly
Development of fixed abrasive chemical mechanical polishing process for glass disk substrates
International Journal of Advanced Manufacturing Technology, 2013Zhong Z W, Z W Zhong
exaly
Copper Chemical Mechanical Polishing Using Fixed-abrasive Polishing Pad
1999Nguyen Hoang, V. +4 more
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Effect of slurry and fixed abrasive pad on chemical mechanical polishing of SiC wafer
Materials Science in Semiconductor ProcessingDaqing Zhou
exaly
Tribological glazing evolution of fixed abrasive pad under different polishing solution conditions
Industrial Lubrication and TribologyMinghua Pang, Wang Zhankui
exaly