Results 211 to 220 of about 2,759 (235)

Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools

Tribology International, 2016
Abstract The semi-fixed and fixed polishing film with diamond and alumina abrasive are used for a contrastive experiment involving polishing SiC and sapphire substrates in this study. The material removal rate (MRR) and surface topography of substrate, the protrusion height of abrasive together with the wear debris, are investigated to reveal the ...
Qiufa Luo, Jing Lu, Xipeng Xu
openaire   +1 more source

Advances in the CMP Process on Fixed Abrasive Pads for the Polishing of SOISubstrates with High Degree of Flatness

MRS Proceedings, 2004
AbstractThe new approach using Fixed Abrasive (FA) pads for polishing thick film Silicon-on- Insulator (SOI) wafers after bonding and grinding process [1] has been further developed. The aim is a practicable industrial manufacturing process, where the major specifications especially in long term stability and removal rate should be achieved.
Kulawski, Martin, Luoto, Hannu, Henttinen, Kimmo, Suni, Ilkka, Weimar, F., Mäkinen, J.   +5 more
openaire   +2 more sources

Study on the Mechanism of Electrochemical Anodization for the Fixed-Abrasive Polishing of 4H-SiC

ECS Journal of Solid State Science and Technology
Silicon carbide (SiC), as a core material for third-generation semiconductors, yet its extreme hardness and chemical inertness present significant challenges for polishing. This study investigated the mechanism of electrochemical anodic oxidation on 4H-SiC and analyzed the effects of electrolyte type, concentration, and potential ...
Lingwei Wu, Yuheng Wang, Min Wei, Mengmeng Shen, Yinggang Wang, Hongyu Chen, Binghai Lyu, Wei Hang   +7 more
openaire   +1 more source

Study of the humidity-controlled CeO fixed-abrasive chemical mechanical polishing of a single crystal silicon wafer

Tribology International, 2023
Chen Xiao, Shibo Zhang
exaly  

Modeling of chemical mechanical polishing using fixed abrasive technology

2001
Chemical Mechanical Polishing (CMP) is conventionally carried out using abrasive slurry and a polishing pad. An alternative process is the "fixed abrasive" polish. Existing models, which accurately predict oxide thickness variations across a chip for the conventional CMP process, have not previously been tested for the fixed abrasive process.
openaire   +1 more source

Fixed abrasive polishing: the effect of particle size on the workpiece roughness and sub-surface damage

International Journal of Advanced Manufacturing Technology, 2021
Xinyu Luo
exaly  

Effects of chemical slurries on fixed abrasive chemical-mechanical polishing of optical silicon substrates

International Journal of Precision Engineering and Manufacturing, 2013
Zhao-Wei Zhong
exaly  

Experimental study on multi-layer ice fixed abrasive polishing of single crystal germanium wafer

International Journal of Advanced Manufacturing Technology, 2015
Dunwen Zuo, Yuli Sun
exaly  

A Study of Nano-Polishing of Injection Molds Using a Fixed Abrasive Pad

Key Engineering Materials, 2003
Jae Young Choi, Ho Youn Kim, Jae Hong Park, Hae Do Jeong, Heonduc Seo   +4 more
openaire   +1 more source

Molecular dynamics simulation of SiC removal mechanism in a fixed abrasive polishing process

Ceramics International, 2019
Jiapeng Chen, Piao Zhou, Yongwei Zhu
exaly