Results 1 to 10 of about 211,617 (192)
First vertical-cavity surface-emitting laser made entirely in Poland [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2021 The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (
Marcin Gębski +9 more
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Application of Scanning Hall Probe Microscopy Technique at Room Temperature 300K. [PDF]
Kirkuk Journal of Science, 2018 Active areas of bismuth Hall Probe sensors in the range (0.1 – 1) µm have been fabricated on Si/SiO2 with GaAs substrates at thickness of bismuth from (40, 60 and 70) nm by Electron Beam Lithography (EBL) and lift-off process.
Hussein Ali Mohammed
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Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study
Crystals, 2020 We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE.
Monica Bollani +8 more
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Specific Design Features of Charge Sensitive Amplifiers on Arsenide-Gallium Master Slice
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created.
O. V. Dvornikov +3 more
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Известия высших учебных заведений России: Радиоэлектроника, 2023 Introduction. The requirements for the performance of measuring devices, including their operating frequency, are constantly becoming stricter. This encourages the creation of wide-band microcircuits for application in microwave blocks of devices, such ...
D. S. Danilov +5 more
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EFFECTS OF GRADING LAYERS ON GaAs VERTICAL CAVITY SURVACE EMITTING LASER PERFORMANCE [PDF]
Kirkuk Journal of Science, 2016 This study is an attempt to investigate the effect of grading layers thicknesses and doping on the distributed Bragg reflectors (DBRs) resistivity by using advanced numerical simulation (ISETCAD) .
Ashty M. Aaref, Farah Z. Jasim
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X-ray diffractometric study of HDPE/GaAs and HDPE/GaAs
Фізика і хімія твердого тіла, 2023 High-density polyethylene sheets (HDPE), HDPE/GaAs and HDPE/ GaAs composites with GaAs and GaAs semiconductor fillers were studied by X-ray diffractometry at room temperature.
N.N. Gadzhieva +3 more
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Characterization of Gaas/Si/GaAs Heterointerfaces [PDF]
MRS Proceedings, 1989 ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates.
Liliental-Weber, Z., Mariella, R.P.
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The Effect of Thermal Annealing on the Diffusion Profile of Nickel in GaAs Substrates [PDF]
Engineering and Technology Journal, 2009 Diffusion of nickel in GaAs has been studied at 950ºC. The diffusion wasenhanced during limited interval and for different quantities of As. Nickel atomshad diffused in the beginning due to the interstitial movement of atoms but largenumber of nickel ...
Aseel A.K. Hadi
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Фізика і хімія твердого тіла, 2020 In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in ...
S. P. Novosyadliy +3 more
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