Results 91 to 100 of about 211,716 (291)

Observation of the Purcell effect in high-index-contrast micropillar

, 2007
We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer ...
Atkinson, P., Bennett, A. J., Ellis, D. J. P., Farrer, I., Ritchie, D. A., Shields, A. J.   +5 more
core   +1 more source

XOR‐Logic Phase Coding Programmable Metasurface for Low Power‐Consumption Systems

Advanced Science, EarlyView.
By leveraging XOR logic, the biasing‐network complexity of 2D programmable metasurfaces is reduced from m×n to m+n through efficient row‐column control. This enables versatile functions including beam deflection and beamforming, facilitating applications in wireless communications and beyond.
Ruichao Zhu, Sai Sui, Junyan Dai, Qunyan Zhou, Yuxiang Jia, Yajuan Han, Yuxi Li, Shaojie Wang, Qiang Cheng, Jiafu Wang, Tie Jun Cui   +10 more
wiley   +1 more source

Change of the Optoelectronic Properties of Semiconductor Compounds Induced by Nanosecond Laser Irradiation Pulses

Фізика і хімія твердого тіла
New research has discovered discrepancies in the melting points, plasma generation, and resulting changes in optoelectronic properties of semiconductor materials A2B6 and A3B5 when exposed to laser light, even when the experimental conditions are the ...
S. Levytskyi, Z. Cao, О. Koba, М. Koba
doaj   +1 more source

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Nanoscale Research Letters, 2017
Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated.
Lanzhong Hao, Yunjie Liu, Zhide Han, Zhijie Xu, Jun Zhu   +4 more
doaj   +1 more source

First-principles studies of kinetics in epitaxial growth of III-V semiconductors

, 2002
We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing.
Kratzer, P., Penev, E., Scheffler, M.
core   +1 more source

Thermally Modulated Specular Phonon Transport in a High‐Debye‐Temperature Diamond Nanobeam

Advanced Science, EarlyView.
Thermal transport in single‐crystal diamond nanobeams is measured from 140 to 300 K using electro‐thermal micro‐suspended structures. The thermal conductivity shows an increasing deviation from Boltzmann transport predictions assuming fully diffuse boundary scattering at lower temperatures.
Seohee Jang, Seung‐Woo Jeon, Takuma Shiga, Jeeyoung Shin, Sangwook Han, Woosung Park   +5 more
wiley   +1 more source

Pushing Efficiency Limits: SCAPS-Based Analysis of GaAs and BAs Solar Cells for Next-Generation Photovoltaics

East European Journal of Physics
The present study utilizes SCAPS software to simulate and analyze the semiconductor materials gallium arsenide (GaAs) and boron arsenide (BAs) for photovoltaic applications.
Merad Laarej, Mama Bouchaour, Imane Bouazzaoui   +2 more
doaj   +1 more source

Cells Dynamically Adapt Their Nuclear Volumes and Proliferation Rates During Single to Multicellular Transitions

Advanced Science, EarlyView.
It is currently not well understood how cells regulate basic properties, e.g., volume and mechanics within dense multicellular environments like tumors. Here, we show that different cell types of cancer and also normal cells largely decrease their nuclear and cellular volumes in emerging cell clusters and that this is partly driven by cell cycle shifts.
Vaibhav Mahajan, Keshav Gajendra Babu, Markus Mukenhirn, Antje Garside, Vinita Ajit Kini, Trishla Adhikari, Timon Beck, Byung Ho Lee, Kyoohyun Kim, Carsten Werner, Raimund Schlüßler, Alf Honigmann, Sebastian Aland, Anna Verena Taubenberger   +13 more
wiley   +1 more source

Improved method of fabricating planar gallium arsenide diodes [PDF]

, 1969
Improved method fabricates electroluminescent planar P-N gallium arsenide diodes. GaAs is masked with silicon monoxide to allow P-type impurities to be diffused into unmasked portions of GaAs to form P-N ...
Roy, M. M., Yeh, T. H.
core   +1 more source

Atomic Hydrogen Cleaning of Polarized GaAs Photocathodes

, 2004
Atomic hydrogen cleaning followed by heat cleaning at 450$^\circ$C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the ...
Brachmann, A., Clendenin, J. E., Garwin, E. L., Harvey, S., Kirby, R. E., Luh, D. -A., Maruyama, T., Prepost, R., Prescott, C. Y.   +8 more
core   +2 more sources