Results 11 to 20 of about 211,716 (291)
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2023 To study the S-parameters and dielectric permittivity of polycor and GaAs samples, a vector network analyzer R4-MWM-118 with a special measuring cell and a modified Nicholson–Ross–Weir method were used.
D. A. Kondrashov +4 more
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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko +7 more
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St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022 In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed.
Adamov Roman +7 more
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Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese [PDF]
, 2014 The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.
A. Gubkin +9 more
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The Journal of Engineering, 2019 This paper proposes an improved estimation approach for modelling RF power amplifiers (PAs) using the Saleh behavioural model. The proposed approach is appropriate for solid-state PA technologies.
Haider Al-kanan, Xianzhen Yang, Fu Li
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Novel vortex phases and vortex manipulation in highly anisotropic superconductors by Scanning Hall Probe Microscopy (SHPM) [PDF]
Kirkuk Journal of Science, 2017 Scanning Hall probe microscopy (SHPM) has been used to demonstrate the interaction of pancake vortices with the Josephson vortex lattice in Bi2Sr2CaCu2O8+δ (2212) single crystals at large in-plane fields in the ‘‘crossing lattices” regime of highly ...
Hussein Ali Mohammed
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Sequential nature of damage annealing and activation in implanted GaAs [PDF]
, 1989 Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first.
Bai, G. +4 more
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Research on HEMT device parameter extraction method based on artificial neural network
Dianzi Jishu Yingyong, 2020 Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
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Frontiers in Plant Science, 2021 Bacterial wilt (BW) caused by Ralstonia solanacearum (R. solanacearum), is a vascular disease affecting diverse solanaceous crops and causing tremendous damage to crop production.
Xiaoying Pan +12 more
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Strong extinction of a far-field laser beam by a single quantum dot [PDF]
, 2007 Through the utilization of index-matched GaAs immersion lens techniques we demonstrate a record extinction (12%) of a far-field focused laser by a single InAs/GaAs quantum dot.
Abouraddy A. F. +22 more
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