Results 241 to 250 of about 211,716 (291)

Scalable InAs/InGaAs DWELL structures for broadband infrared emission spanning the E- to O-band. [PDF]

Sci Rep
Mouloua D, Martin M, Ilahi B, Cavalaglio S, Chauvin N, Bassani F, Rochat N, Moeyaert J, Salem B, Baron T.   +9 more
europepmc   +1 more source

What Is Your Diagnosis? Esophageal and Gastric Washes in a Pet Moellendorff's Rat Snake

Veterinary Clinical Pathology, EarlyView.
Lina C. Bilhalva, Priscila B. S. Serpa, Natalia J. Strandberg, Sriveny Dangoudoubiyam, Craig A. Thompson, Andrea P. Santos   +5 more
wiley   +1 more source

Visualizing Nanoscale Charge Flows in Multi-Dimensional WSe2/GaAs Vertical Diodes

Piazza V, Zendrini M, Blaga C, Wodzislawski K, Rudra A, Banerjee M, Morral AFi.   +6 more
europepmc   +1 more source

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2014
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  +28 more sources

Photoreflectance from GaAs and GaAs/GaAs interfaces

Physical Review B, 1989
Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K.
, Sydor, , Angelo, , Wilson, , Mitchel, , Yen   +4 more
openaire   +2 more sources

Interfacial barrier characteristics of LTGaAs on low doped GaAsGaAs/nGaAs and LTGaAs/pGaAs layers

Materials Science and Engineering: B, 1993
As-grown (σ-conductive) and annealed (semi-insulating (SI)) low temperature (LT) double layers have been analysed by conductivity profiling. The σ-LTGaAs/GaAs junction represents an NT+/GaAs junction with no noticeable depletion effects in the σ-LTGaAs.
K.M Lipka, B Splingart, X Zhang, M Poese, K Panzlaff, E Kohn   +5 more
openaire   +1 more source

Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998
Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs are reported. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01%. Both DyP and DyAs have been grown by solid source molecular beam epitaxy.
P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, B. R. Kumar, T. C. Lai, S. N. G. Chu, R. Alvis, R. T. Lareau, M. C. Wood   +9 more
openaire   +1 more source

Characterization of ErAs/GaAs and GaAs/ErAs/GaAs Structures

MRS Proceedings, 1989
AbstractA series of ErAs/GaAs and GaAs/ErAs/GaAs epilayers have been grown on (100) GaAs substrates by molecular-beam epitaxy. Misfit dislocations at the ErAs/GaAs interface have been analyzed using the weak-beam technique of transmission electron microscopy.
Jane G. Zhu, Chris J. Palmstrøm, Suzanne Mounier, C. Barry Carter   +3 more
openaire   +1 more source

Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures

Journal of Electronic Materials, 1998
There is a significant interest in the area of improving high temperature stable contacts to III-V semiconductors. Two attractive material systems that offer promise in this area are dysprosium phosphide/gallium arsenide (DyP/GaAs) and dysprosium arsenide/gallium arsenide (DyAs/GaAs).
P. P. Lee, R. J. Hwu, L. P. Sadwick, H. Balasubramaniam, B. R. Kumar, R. Alvis, R. T. Lareau, M. C. Wood   +7 more
openaire   +1 more source

Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs

Journal of Physics D: Applied Physics, 1999
GaAs at interfaces of molecular beam epitaxy (MBE) grown ZnSe/GaAs/GaAs films with ZnSe layers of different thicknesses is studied by photoreflectance (PR) spectroscopy. We can separate two different near-band-edge optical features originating from two different regions of the heterostructure by using in-phase and out-phase PR measurements as well as ...
M E Constantino, H Navarro-Contreras, M A Vidal, B Salazar-Hernandez, A Lastras-Martinez, I Hernandez-Calderon, M Lopez-Lopez   +6 more
openaire   +1 more source