Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
Nanomaterials, 2022 The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ...
Mikhail O. Petrushkov +12 more
doaj +1 more source
Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures [PDF]
, 1996 Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first-order kinetic model.
Akasaki +11 more
core +2 more sources
Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation
Nanomaterials, 2020 GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap.
Ye Shen +8 more
doaj +1 more source
Photonic and Terahertz applications as the next gallium arsenide market driver [PDF]
Modern Electronic Materials, 2020 Analysis of current GaAs and related device market initiated in a number of earlier works has been continued. Binary semiconductor GaAs compound is a conventional MW electronics material.
Nikolay A. Kulchitsky +2 more
doaj +3 more sources
Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF
Revista Facultad de Ingeniería, 2019 En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el ...
Guillermo Rafael-Valdivia, Ph. D.
doaj +1 more source
, 2005 We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs
Chiba +10 more
core +1 more source
Gallium Arsenide Monolithic Optoelectronic Circuits [PDF]
, 1981 The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional
Bar-Chaim, N. +5 more
core +1 more source
Predicion of charge separation in GaAs/AlAs cylindrical Russian Doll nanostructures
, 1997 We have contrasted the quantum confinement of (i) multiple quantum wells of flat GaAs and AlAs layers, i.e. $(\GaAs)_{m}/(\AlAs)_n/(\GaAs)_p/(\AlAs)_q$, with (ii) ``cylindrical Russian Dolls'' -- an equivalent sequence of wells and barriers arranged as ...
A. Franceschetti +15 more
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Detection of the magneto-structural phase coexistence in MnAs epilayers at a very early stage
, 2007 We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (100 ...
Eddrief, M. +6 more
core +3 more sources
X-ray rocking curve study of Si-implanted GaAs, Si, and Ge [PDF]
, 1982 Crystalline properties of Si-implanted GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other.
Glass, H. L. +3 more
core +1 more source