Results 41 to 50 of about 211,716 (291)

ELABORACIÓN DE UN CONTROL DE SERVOMECANISMO PARA LA CARACTERIZACIÓN ZONAL DE MATERIALES SEMICONDUCTORES POR LA TÉCNICA DE FOTORREFLECTANCIA

open access: yesRevista de Investigaciones Universidad del Quindío, 2017
En este trabajo se presenta la automatización de un control electrónico digital para la caracterización zonal de materiales semiconductores, por medio de la técnica de Fotorreflectancia (FR) a temperatura ambiente.
J. A. Acevedo-Londoño   +2 more
doaj   +1 more source

Theory of self-diffusion in GaAs

open access: yes, 1996
Ab initio molecular dynamics simulations are employed to investigate the dominant migration mechanism of the gallium vacancy in gaas as well as to assess its free energy of formation and the rate constant of gallium self-diffusion.
Bockstedte, Michel, Scheffler, Matthias
core   +2 more sources

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

open access: yesAdvanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu   +2 more
wiley   +1 more source

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

open access: yesMaterials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang   +3 more
doaj   +1 more source

Near-bandgap wavelength-dependent studies of long-lived traveling coherent longitudinal acoustic phonon oscillations in GaSb/GaAs systems

open access: yes, 2007
We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb ...
A. Wood   +9 more
core   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

open access: yes, 2007
Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal decomposition of ...
A J Hauser   +5 more
core   +1 more source

Oral Dosed Organo‐Silica Nanoparticles Restore Glucose Homeostasis and β‐Cell Function in Diabetes Rats

open access: yesAdvanced Functional Materials, EarlyView.
An oral nanoplatform, MOP@T@D, which can maintain glucose homeostasis and restore islet β cells in diabetic rats is developed. It achieves efficient intestinal absorption and liver‐targeted delivery. The nanoparticle disintegrates only in response to hyperglycemia to release insulin on demand and provides antioxidant protection through selenoprotein ...
Chenxiao Chu   +14 more
wiley   +1 more source

The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

open access: yesDianzi Jishu Yingyong, 2018
This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj   +1 more source

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

open access: yes, 2010
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate.
A. Koser   +9 more
core   +1 more source

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