Results 51 to 60 of about 211,716 (291)
Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato +10 more
wiley +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Electron tunneling time measured by photoluminescence excitation correlation spectroscopy [PDF]
The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation ...
Chow, D. H. +4 more
core +1 more source
A droplet microfluidic platform is employed to enable high‐throughput, uniform tumor spheroid generation for evaluating siRNA‐loaded nanomedicines at the protein level. As a proof of concept, breast (MCF‐7) and brain (U87 MG) cancer cell lines are investigated using this platform, revealing penetration profiles and therapeutic responses between the two
Ling Liu +4 more
wiley +1 more source
Application of nanophotonics to the next generation of surface-emitting lasers
Novel trends and concepts in the design and fabrication of vertical cavity surface-emitting lasers (VCSELs) and their integration in optical networks and implementation in integrated photonics applications are discussed.
Ledentsov Nikolay N. +4 more
doaj +1 more source
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
doaj +1 more source
Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures
Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS).
Bunk, Ryan +4 more
core +1 more source
Directional Liquid Transport Enabled pH‐Responsive Hierarchical Composite for Enhanced Wound Healing
A hierarchical composite with a gradient architecture transitioning from hydrophobic to hydrophilic layers integrates diode‐like liquid transport, efficient water absorption, breathability, and mechanical robustness. This device enables a multifunctional therapeutic platform with pH‐responsive dual‐drug release, providing synergistic anti‐inflammatory ...
Baolin Wang +5 more
wiley +1 more source
This work simulates the plowing process of a single asperity GaAs by diamond indenter using molecular dynamics simulations. The deformation mechanism of asperity GaAs is revealed by examining the topography evolution and stress state during the plowing ...
Baozhen Li +4 more
doaj +1 more source
Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters
We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs.
Apostolopoulos, V. +6 more
core +1 more source

