Results 71 to 80 of about 211,716 (291)

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source

Phosphine Functionalization of GaAs(111)A Surfaces [PDF]

, 2008
Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface ...
Biteen, Julie S., Brunschwig, Bruce S., Lewis, Nathan S., Michalak, David J., Traub, Matthew C., Webb, Lauren J.   +5 more
core   +1 more source

Radiotherapy Enhancement by Gold Nanocluster‐functionalized Nanoliposomes Using Polychromatic Orthovoltage X‐ray Irradiation

Advanced Materials Interfaces, EarlyView.
Lipid drug carriers to which ultra‐small gold nanoparticles were added enabled more efficient radiotherapy of cultured pancreatic cancer tumors. These nanoparticles boosted radiation‐induced damage to tumors by generating more reactive molecules, though higher gold levels are needed for strong benefits.
Nazareth Milagros Carigga Gutierrez, Eaazhisai Kandiah, Sofia Leo, Erwan Dupont, Fabrizio Johnson‐Corrales, Marc‐André Hograindleur, Sarvenaz Keshmiri, Hélène Elleaume, Benoit Busser, Romain Haudecoeur, Véronique Jacob, Anthony Vella, Véronique Josserand, Maxime Henry, Jean‐Luc Coll, Amandine Hurbin, Xavier Le Guével, Mans Broekgaarden   +17 more
wiley   +1 more source

Millimeter-wave monolithic diode-grid frequency multiplier [PDF]

, 1990
A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate.
Maserjian, Joseph
core   +1 more source

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

Sensors, 2020
We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs.
Boqun Dong, Andrei Afanasev, Rolland Johnson, Mona Zaghloul   +3 more
doaj   +1 more source

Photonic crystal thin films of GaAs prepared by atomic layer deposition [PDF]

, 2006
Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under ...
Bardosova, M, Pemble, ME, Povey, IM, Renard, J, Thomas, K, Whitehead, DE   +5 more
core   +2 more sources

Experimental Evidence of Free Carrier Generation in 2D Hybrid Organic–Inorganic Perovskites

Advanced Optical Materials, EarlyView.
ABSTRACT Despite the significant potential of 2D hybrid organic–inorganic perovskites (2DHOIPs) for high‐efficiency optoelectronics application‐comparable to their 3D counterparts, the fundamental carrier photogeneration remains unclear. In contrast to conventional ultrafast optical property characterization, we use ultrafast photocurrent spectroscopy ...
Tuhin Ghosh, Pan Adhikari, Yao Gao, Apparao M. Rao, Dawen Li, Haimei Zheng, Ying Shi, Letian Dou, Jianbo Gao   +8 more
wiley   +1 more source

Ohmic contacts to GaAs for high-temperature device applications [PDF]

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs.
Anderson, W. T., Jr., Christou, A., Dietrich, H. B., Giuliani, J. F.   +3 more
core   +1 more source

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

, 2016
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots.
Benchamekh, R., O'Reilly, E. P., Schulz, S.   +2 more
core   +1 more source