Failure Mechanism of pHEMT in Navigation LNA under UWB EMP [PDF]
Micromachines, 2022 With the development of microelectronic technology, the integration of electronic systems is increasing continuously. Electronic systems are becoming more and more sensitive to external electromagnetic environments.
Yonglong Li +5 more
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Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process [PDF]
Sensors, 2022 This paper realized a charge pump phase locked loop (CPPLL) frequency source circuit based on 0.15 μm Win GaAs pHEMT process. In this paper, an improved fully differential edge-triggered frequency discriminator (PFD) and an improved differential ...
Ranran Zhao +3 more
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A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT [PDF]
Micromachines, 2023 To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility ...
Jiaxuan Li +5 more
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Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA [PDF]
Micromachines, 2022 In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor
Qian Lin +3 more
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An 8–18 GHz 90° Switched T-Type Phase Shifter [PDF]
Micromachines, 2023 This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, the proposed TPS adds a compensation capacitance to greatly enhance the phase shifting capacity.
Jialong Zeng +5 more
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W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function [PDF]
MicromachinesThis paper presents a W-band power amplifier monolithic microwave integrated circuit (MMIC) that is designed for high-precision millimeter-wave systems and fabricated using a 0.1 µm GaAs pHEMT process.
Seong-Hee Han, Dong-Wook Kim
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A 10–20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology [PDF]
Micromachines, 2023 In a beamforming circuit for a modern broadband phased-array system, high accuracy and compactness have received sufficient attention as they are directly related to side lobe level and fabrication cost, respectively. In order to meet the low phase error
Ding He +6 more
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The Design of a 1–6 GHz Broadband Double-Balanced Mixer [PDF]
Micromachines, 2023 This brief proposes a 1–6 GHz broadband double-balanced mixer. On the basis of the standard Marchand balun mixer, two techniques to enhance the performance of the mixer are proposed.
Yujun Wang +4 more
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Compact Bandwidth-Enhanced 180-Degree Phase Shifter Using Edge-Coupled Multi-Microstrip and Artificial Transmission Line [PDF]
Micromachines, 2023 Compactness has obtained sufficient importance in wideband phase shifter design considerations, as it is directly related to fabrication cost. In this paper, a novel structure was presented to create compact broadband 180-degree phase shifter, which has ...
Ding He +4 more
doaj +2 more sources
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
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