High-breakdown AlGaAs/InGaAs/GaAs PHEMT with telluriumdoping
Electronics Letters, 1995 The authors report the fabrication and characterisation of an Al/sub 0.43/Ga/sub 0.57/As/In/sub 0.2/Ga/sub 0.8/As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using ...
N.X. Nguyen +3 more
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Upgrade of the Cold Electronics of the ATLAS HEC Calorimeter for sLHC [PDF]
, 2009 The signal amplification and summation electronics of the ATLAS Hadronic End-cap Calorimeter (HEC) is operated at the circumference of the HEC calorimeters inside the cryostats in liquid argon.
Dannheim, D +7 more
core +1 more source
Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs [PDF]
Solid-State Electronics, 2003 Abstract The temperature-dependent DC characteristics and noise performance of In 0.49 Ga 0.51 P/In 0.15 Ga 0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm 2 are investigated at 12 GHz with temperature ranging from 300 to 450 K.
H.K. Huang +4 more
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An Ultra-Wideband Digitally Programmable Power Amplifier with Efficiency Enhancement for Cellular and Emerging Wireless Communication Standards [PDF]
, 2016 The design and measurements of a fabricated novel digitally programmable wideband power amplifier (PA) are presented. The PA is made suitable for use in all communication standards, including GSM, 3G, LTE and Femto-cells, offering a bandwidth of several ...
Albasha, Lutfi +7 more
core +3 more sources
Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C [PDF]
, 2008 R. Akram, M.
Oral, Ahmet
core
Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers [PDF]
, 2015 Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end
Cerny, D. +7 more
core +2 more sources
Thermo-mechanical analysis of GaAs devices under temperature-humidity-bias testing
, 2015 International audienceAccelerated life tests on microelectronic devices are needed to estimate their degradation under severe environment. THB (Temperature Humidity Bias) [1] at 85°C and 85%RH (relative humidity) is commonly used for reliability studies.
Adokanou, Kokou +4 more
core +3 more sources
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors [PDF]
, 2017 We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications.
Chow T. Paul +4 more
core +2 more sources
High Linearity Millimeter Wave Power Amplifiers with Novel Linearizer Techniques [PDF]
, 2008 Millimeter-wave communications have experienced phenomenal growth in recent years when limited frequency spectrum is occupied by the ever-developing communication services.
Bai, Dafu, Bai, Dafu
core +2 more sources
GaAs pHEMT Cascode Low Noise Amplifier for Wireless Applications [PDF]
International Journal of Computer and Electrical Engineering, 2009 104 Abstract—This paper presents low noise amplifier (LNA) for wireless application which has been implemented in a 0.15μm GaAs pHEMT technology. The LNA was designed using cascode topology with feedback techniques which produces better gain and good stability over entire frequency.
Arjuna Marzuki +8 more
openaire +1 more source