Results 101 to 110 of about 3,422 (258)
Local self-heating in short gate GaAs PHEMTs
, 1996 Self heating in ultrashort gate length GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) is investigated. The experimental results include an original measurement of the average temperature in the gate drain area of the device channel. An original model which accounts for both bidimensional heat transfer and quasi bidimensional energy ...
Aniel, F. +5 more
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Microelectromechanical Systems (MEMS) Resistive Heaters as Circuit Protection Devices [PDF]
, 2013 With increased opportunities for the exploitation (i.e., reverse engineering) of vulnerable electronic components and systems, circuit protection has become a critical issue.
Coutu, Ronald A., Jr., Ostrow, Scott A.
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Design of cryogenic 700 MHz HEMT amplifier [PDF]
, 2004 We present a way to design a high-frequency low-temperature pHEMT-based balanced amplifier. The design is based on measured cryogenic S-parameters combined with a small-signal noise model.
Hakonen, Pertti J., Roschier, Leif
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Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects [PDF]
, 2005 Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i.e., surface state densities and bulk spurious energy levels) must be taken into account in the large-signal dynamic modeling of III-V field-effect ...
Filicori, Fabio +7 more
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Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor [PDF]
, 2014 The effects of deep levels on the transconductance dispersion in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was interpreted using capacitance deep level transient spectroscopy (DLTS).
Choi, Kyoung Jin, Lee, JL, Yoo, HM
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Modelování nelineárních prvků vysokofrekvenčních obvodů neuronovými sítěmi [PDF]
, 2012 Katedra ...
Pospíšil, Ladislav
core
Enhancing the Accuracy of Microwave Element Models by Artificial Neural Networks [PDF]
, 2004 In the recent PSpice programs, five types of the GaAs FET model have been implemented. However, some of them are too sophisticated and therefore very difficult to measure and identify afterwards, especially the realistic model of Parker and Skellern.
Dobes, J., Pospisil, L.
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Global modeling approach to the design of an MMIC amplifier using Ohmic Electrode-Sharing Technology [PDF]
, 2003 An innovative technique for high--density, high-frequency integrated circuit design is proposed.The procedure exploits the potentialities of a global modeling approach,previously applied only at device level,enabling the circuit designer to explore ...
Cidronali, A. +4 more
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GaAs pHEMT class-E power amplifier design
, 2021 Yüksek güçlü RF kuvvetlendiciler mikrodalga sistemlerde genelde verici katında antenden önce yer alır. Bu tür kuvvetlendiricilerin tasarımlarında yüksek frekans elektroniğinin tasarım ilkelerine ek doğrusal olmayan tasarım tekniklerinin de kullanılmak zorundadır.Bir RF güç kuvvetlendiricisi aktif elemana ek olarak giriş ve çıkış katından oluşur.
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