Thermal Memory Effects on the Linearity of a GaAs PHEMT
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
openaire +3 more sources
Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy [PDF]
, 2001 Capacitance deep-level transient spectroscopy (DLTS) was used to study surface states on aluminum compounds. Two hole-like traps were observed in pseudomorphic high-electron-mobility transistor with a multifinger gate.
Balakrishnan +28 more
core +1 more source
A general neuro-space mapping technique for microwave device modeling
EURASIP Journal on Wireless Communications and Networking, 2018 Accurate modeling of nonlinear microwave devices is critical for reliable design of microwave circuit and system. In this paper, a more general neuro-space mapping (Neuro-SM) method is proposed to fulfill the needs of the increased modeling complexity ...
Lin Zhu +6 more
doaj +1 more source
Boundary layer flow and heat transfer over a permeable shrinking sheet with partial slip [PDF]
, 2010 The steady, laminar flow of an incompressible viscous fluid over a shrinking permeable sheet is investigated. The governing partial differential equations are transformed into ordinary differential equations using similarity transformation, before ...
Aman, Fazlina, Ishak, Anuar
core
GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]
, 2017 Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo +2 more
core +2 more sources
An X‐to‐Ka band MMIC up‐converter in GaAs pHEMT technology for Ka‐band broadband satellite communications [PDF]
, 2014 Corrado Florian +3 more
openalex +1 more source
Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications [PDF]
, 2021 I. M. Dobush +7 more
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Design of an X-band high efficiency continuous-mode power amplifier
Dianzi Jishu YingyongTo improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao +3 more
doaj +1 more source
20–40 GHz dual‐gate frequency doubler using 0.5 μm GaAs pHEMT technology [PDF]
, 2014 Yuan Chun Li, Fan‐Hsiu Huang, Quan Xue
openalex +1 more source
A 20–40 GHz Harmonic Rejection Enhanced Frequency Doubler in 150 nm GaAs p-HEMT
IEEE AccessThis paper presents a broadband monolithic microwave integrated circuit (MMIC) frequency doubler within a 20-40GHz frequency operation range in a $0.15\mu $ m GaAs p-HEMT process.
Fengyun Chen +3 more
doaj +1 more source