A 37–43.5 GHz front‐end MMIC for 5G high‐performance channel emulator in 0.1 μm GaAs pHEMT [PDF]
, 2023 Wentao Zhu +4 more
openalex +1 more source
A 66-76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application. [PDF]
Micromachines (Basel), 2022 Zhou P +5 more
europepmc +1 more source
Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics. [PDF]
Sensors (Basel), 2022 Tamošiūnas V +5 more
europepmc +1 more source
Editorial for the Special Issue on Broadband Terahertz Devices and Communication Technologies. [PDF]
Micromachines (Basel), 2023 Zhang L, Pang X, Pitchappa P.
europepmc +1 more source
Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures. [PDF]
Journal of Radio Electronics, 2019 P.A. Zmanovsky +6 more
openaire +1 more source
Increased Efficiency of a Current Compensating Load Modulation Based MMIC Doherty Power Amplifier Design In 0.25m GaAs pHEMT Technology [PDF]
, 2020 Seyedehmarzieh Rouhani +3 more
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The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects [PDF]
, 2011 2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology.
del Alamo, Jesus A.
core +1 more source
Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures. [PDF]
Materials (Basel), 2023 Klochkov AN +8 more
europepmc +1 more source
A Ka-Band Integrated Six-Port Chip for Analog Complex Correlator. [PDF]
Sensors (Basel), 2022 He W, Chen X, Gong J, Hu A, Miao J.
europepmc +1 more source
Design of Low Noise Distributed Amplifier with Adjustable Gain Control in 0.15um GaAs PHEMT
, 2011 Ying Zhang, Zhigong Wang, Jian Xu
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