Millimetre‐wave on‐chip SIW filtering crossover using 0.25 µm GaAs pHEMT technology [PDF]
Electronics LettersThis letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated.
Xin Zhou +5 more
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Electronics Letters, 2023 To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode.
Jia‐Shiang Fu
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An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes [PDF]
ITM Web of Conferences, 2019 A new automated small-signal GaAs pHEMT model extraction technique based on the analytical approach followed by optimization is suggested. The performance capability of the technique is confirmed by successful small-signal modeling of pHEMTs manufactured
Popov Artem +5 more
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Гетероструктуры AlGaAs/InGaAs/GaAs для ключевых pHEMT-транзисторов
Письма в журнал технической физики, 2022 The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided δ-doping at 6×1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm ...
Д.Ю. Протасов +5 more
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Stabilisation of multi‐loop amplifiers using circuit‐based two‐port models stability analysis
IET Circuits, Devices and Systems, 2021 This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi‐loop circuits and to design the required stabilization network.
Abbas Pasdar, Masoud Meghdadi, Ali Medi
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K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes
IEEE Journal of MicrowavesIn this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose +5 more
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GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS
Российский технологический журнал, 2017 The PHEMT epitaxial structures with a doping profile in the form of tin nanowires were fabricated using vicinal GaAs substrate disoriented by 0.3° in relation to accurate orientation (100). Investigation of electron transport properties of the structures
A. E. Yachmenev +2 more
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Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands [PDF]
MicromachinesIn this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode.
Yang Yuan +3 more
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High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology [PDF]
Journal of Electromagnetic Engineering and Science, 2023 In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However,
Taejoo Sim +6 more
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Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms [PDF]
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
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