Results 21 to 30 of about 3,422 (258)
A Wideband D-Band Frequency Sextupler Chain with High Harmonic Rejection in 100 nm GaAs pHEMT Technology [PDF]
MicromachinesThis paper presents a wideband D-band frequency sextupler chain implemented in a 100 nm GaAs pHEMT process. The proposed circuit comprises an input-stage frequency tripler, an inter-stage harmonic-rejection power amplifier, and an output-stage frequency ...
Pinqing Wang +4 more
doaj +2 more sources
W-Band Low-Noise Amplifier with Improved Stability Using Dual RC Traps in Bias Networks on a 0.1 μm GaAs pHEMT Process [PDF]
MicromachinesThis paper demonstrates that potential oscillations in various frequency bands of monolithic microwave integrated circuits (MMICs) can be effectively suppressed using well-designed dual RC traps in the bias networks.
Seong-Hee Han, Dong-Wook Kim
doaj +2 more sources
A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques [PDF]
MicromachinesThis paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning
Boyang Shan, Haipeng Fu, Jian Wang
doaj +2 more sources
An Ultra-Compact On-Chip Reconfigurable Bandpass Filter With Semi-Lumped Topology by Using GaAs pHEMT Technology [PDF]
IEEE Access, 2020 A semi-lumped reconfigurable on-chip bandpass filter with GaAs pHEMT technology is presented in this paper. Three order tunable bandpass filter is designed with serial lumped capacitors, parallel resonators, and reconfigurable components.
Hao-Ran Zhu +3 more
doaj +2 more sources
A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside [PDF]
IEEE Journal of the Electron Devices Society, 2013 This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The
Evgeny V. Erofeev +5 more
doaj +2 more sources
Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]
ITM Web of Conferences, 2019 This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil +3 more
doaj +1 more source
Original Topology of GaAs-PHEMT Mixer [PDF]
2000 30th European Microwave Conference, 2000 An original topology of GaAs-PHEMT mixer is investigated under high conversion gain consideration.Mixer topology is based on "LO source-injection"concept,since RF, IF and LO signals are respectively applied on the gate,drain and source terminals of the mixing transistor.The conversion matrix formalism allows both the optimization of matching and ...
Dubuc, D., Parra, T., Graffeuil, J.
openaire +2 more sources
Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
doaj +1 more source
Annalen der Physik, Volume 535, Issue 12, December 2023., 2023 This article describes the implementation of low‐frequency axion haloscope setups inside the future BabyIAXO magnet. The RADES proposal has a potential sensitivity to the axion‐photon coupling down to values corresponding to the KSVZ model, in the mass range between 1 and 2 μ$\umu$eV.
Saiyd Ahyoune +29 more
wiley +1 more source
Small, Volume 19, Issue 37, September 13, 2023., 2023 This work presents a comprehensive investigation of MXene films operating as microwave resonators under varying humidity. The effect of MXene flake sizes on the resonant performance under varying humidities is experimentally studied. To mitigate the power losses of MXene films upon degradation (e.g., humidity exposure), an active feedback configuration
Omid Niksan +4 more
wiley +1 more source