Results 31 to 40 of about 3,422 (258)
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different frequencies and two multi‐resonant cells that are added in the RF input and RF output to increase ...
Andrea Ashley, Dimitra Psychogiou
wiley +1 more source
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN ...
Yuji Ando +4 more
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IEEE Access, 2021 This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction
Abdouraouf Said Youssouf +2 more
doaj +1 more source
High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications
ASM Science Journal, 2022 We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY +6 more
doaj +1 more source
Electronics Letters, Volume 59, Issue 3, February 2023., 2023 This letter presents a method for implementing a 10–20 GHz low‐noise amplifier with simultaneous noise and input matching performance by using a frequency‐dependent negative feedback network. The analytical equation of the required load is also derived for the first time in order to eliminate the Mille effect caused by the gate‐drain parasitic ...
Ding He +4 more
wiley +1 more source
An X/Ku band phase shifter with filter compensation technology
Electronics Letters, Volume 59, Issue 2, January 2023., 2023 This letter proposes an ultra‐wideband switched T‐type phase shifter, which covers the whole X/Ku band. The proposed switched T‐type phase shifter integrates a switched filter compensation structure, achieving a flat relative phase shift in broadband, which the conventional one cannot acquire.
Jialong Zeng +4 more
wiley +1 more source
A 5.5/12.5‐GHz concurrent dual‐band power amplifier MMIC in 0.25 μm GaAs technology
Electronics Letters, Volume 58, Issue 8, Page 303-305, April 2022., 2022 Abstract A concurrent 5.5/12.5‐GHz dual‐band power amplifier (PA) is designed and implemented in a 0.25 μm GaAs pseudomorphic high electron mobility transistor process. The PA is composed of two stages and adopts LC parallel and series networks for dual‐band matching.
Chunshuang Xie +5 more
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Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier [PDF]
, 2001 We evaluate an oscillator-amplifier MMIC submitted to high-temperature operating life time tests. To relate adequately these results with individual components’ results, it is important to realise that failure mechanisms in non-linear MMICs are governed ...
Beyer, A. +5 more
core +1 more source
Tunnelling and impact ionization in scaled double doped PHEMTs [PDF]
, 2002 No abstract ...
Asenov, A., Kalna, K.
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The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]
ITM Web of Conferences, 2019 The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis +4 more
doaj +1 more source