Results 41 to 50 of about 3,422 (258)
Wideband IMD3 suppression through negative baseband impedance synthesis
IET Microwaves, Antennas &Propagation, Volume 15, Issue 7, Page 728-743, 10 June 2021., 2021 Abstract This article presents a power amplifier (PA) linearisation approach based on synthesising a negative impedance termination at the baseband frequency. Negative baseband termination has been previously shown to suppress intermodulation distortion (IMD) products in power amplifiers.
William Sear, Taylor W. Barton
wiley +1 more source
RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements [PDF]
, 2003 This paper introduces a new technique that allows us to measure the admittance conversion matrix of a two-port device,using a Nonlinear Vector Network Analyzer.This method is applied to extract the conversion matrix of a 0.2 µµµµm pHEMT,driven by a 4.8 ...
Cidronali, A. +8 more
core +1 more source
Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]
, 2001 The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E. +3 more
core +1 more source
Millimeter-wave FET modeling based on a frequency extrapolation approach [PDF]
, 2000 An empirical distributed model, based on electromagnetic analysis and standard S-parameter measurements up to microwave frequencies, is shown to be capable of accurate small-signal predictions up to the millimeter-wave range.
Cidronali, A. +4 more
core +1 more source
IEEE Access, 2019 This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee +5 more
doaj +1 more source
50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]
, 2006 Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, K. +5 more
core +1 more source
Electrical degradation mechanisms of RF power GaAs PHEMTs [PDF]
IEEE International Electron Devices Meeting 2003, 2004 In this research, we have carried out a systematic investigation of the electrical degradation of RF power PHEMTs. By examining devices with different geometries as well as a variety of test structures, our research confirms previous observations of degradation under the gate of the device.
A.A. Villanueva +3 more
openaire +1 more source
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors [PDF]
, 2009 A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications.
Hueting, R.J.E. +4 more
core +3 more sources
Modeling and performance of a 100-element pHEMT grid amplifier [PDF]
, 1996 A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips.
De Lisio, Michael P. +6 more
core +1 more source
IEEE Access, 2021 This paper presents a modular technology for two-stage broadband power amplifier (PA) design. The proposed method focuses on separately realizing two stage’s flat gain characteristics, thus providing the entire circuit’s required flatness ...
Jun Hu +3 more
doaj +1 more source