Results 71 to 80 of about 3,422 (258)
A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley +1 more source
Co-fabrication of planar Gunn diode and HEMT on InP substrate [PDF]
, 2014 We present the co-fabrication of planar Gunn diodes and high electron mobility transistors (HEMTs) on an Indium Phosphide (InP) substrate for the first time. Electron beam lithography (EBL) has been used extensively for the complete fabrication procedure
Cumming, David R.S. +3 more
core +1 more source
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
Известия высших учебных заведений России: Радиоэлектроника, 2018 The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
doaj +1 more source
Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques
IEEE Access, 2023 This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li +6 more
doaj +1 more source
A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System
Electronics Letters, Volume 61, Issue 1, January/December 2025.A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
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Effect of impact ionization in scaled pHEMTs [PDF]
, 2000 The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions.
Asenov, A. +3 more
core
Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study [PDF]
, 1998 The impact of In<sub>x</sub>Al<sub>1-x</sub>As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated.
Asenov, A. +4 more
core +1 more source
The Journal of Engineering, Volume 2019, Issue 12, Page 8458-8462, December 2019., 2019 Parasitic capacitances in high frequency have a significant role in examining the inductor‐capacitor tank oscillators (LC oscillators) output signal quality. Here, the authors proposed a new idea for Ka‐band satellite receiver oscillator, which considers these parasitic elements, in order to maintain a specific precise frequency where there is no need ...
Seyed Hossein Alavi Lavasani, Ali Medi
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Design of a Broadband Amplifier for High Speed Applications [PDF]
, 2002 This paper provides comprehensive insight into the design approach followed for an amplifier dedicated to high speed base band signals. To demonstrate the methodology, an amplifier consisting of nine PHEMT cascode cells within a distributed amplifier ...
Camargo, E. +4 more
core +1 more source
Active quasi circulator: Comprehensive review and performance comparison
Engineering Reports, Volume 6, Issue 6, June 2024.To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan +2 more
wiley +1 more source