Results 91 to 100 of about 74,695 (250)

Topological Spin‐Texture Transitions in van der Waals Magnets Revealed by X‐Ray Fourier Transform Holography

Advanced Materials, EarlyView.
Applied here for the first time to a 2D material, high‐resolution synchrotron x‐ray Fourier transform holography directly images topological spin textures in Fe3GeTe2. Combined with atomistic tight‐binding simulations including itinerant electrons and Rashba spin‐orbit coupling, the approach reveals labyrinth, skyrmion, and mixed phases, and uncovers ...
Sourav Chowdhury, Soumyaranjan Dash, Michael Schneider, Christopher Klose, Chithra H. Sharma, Lisa‐Marie Kern, Tim A. Butcher, Josefin Fuchs, Santanu Pakhira, Samik DuttaGupta, Takashi Taniguchi, Kenji Watanabe, Sujit Das, Sanjeev Kumar, Bastian Pfau, Amir‐Abbas Haghighirad, Moritz Hoesch   +16 more
wiley   +1 more source

Epitaxially Integrated Electro‐Optic KNbO3 Thin Films on Silicon

Advanced Materials, EarlyView.
We demonstrate the first epitaxial integration of electro‐optic KNbO3 thin films on silicon using suboxide molecular‐beam epitaxy. Combining adsorption‐controlled molecular‐beam epitaxy, advanced characterization, and phase‐field modeling, we demonstrate phase‐pure crystalline films mirroring bulk crystals with robust Pockels response, enabling future ...
Sankalpa Hazra, Tobias Schwaigert, Yingxin Zhu, Aiden Ross, Muhammad Aminul Haque Chowdhury, Shun‐Li Shang, Sameer Singh, Zhiyu Zhang, Zhe Wang, Brynn Brower, Saugata Sarker, Suchismita Sarker, Zi‐Kui Liu, Rama K. Vasudevan, Long‐Qing Chen, Yang Yang, Darrell G. Schlom, Venkatraman Gopalan   +17 more
wiley   +1 more source

A Cu2S/NiOOH Heterojunction Enables Highly Selective Ammonia‐to‐Nitrite Electrooxidation at Industrially Relevant Current Densities

Advanced Materials, EarlyView.
Cu2S/NiOOH heterojunction enables efficient ammonia electrooxidation coupled with hydrogen evolution. Interfacial electronic modulation of Ni sites promotes selective NH3‐to‐NO2− electrooxidation at high current density. In a membrane electrode assembly, Cu2S/NiOOH maintains over 90% Faradaic efficiency of nitrite at 800 mA cm−2, highlighting its ...
Ke Wang, Hongzhe Anna Xu, Xin Mao, Xuefei Wang, Min Zheng, Chun‐Chuan Kao, Limei Yang, Jiashu Wang, Boming Sun, Shokoofeh Varshooy, Aijun Du, Qi‐Long Zhu, Jian Liu, Zhenguo Huang   +13 more
wiley   +1 more source

Soft and Transient Bioelectronics Enabled by Polymer‐Free Ti3C2Tx MXene Hydrogels

Advanced Materials, EarlyView.
We present Ti3C2Tx MXene hydrogel (MXgel) bioelectronics, a soft, flexible, and fully transient platform for high‐fidelity neural recording and stimulation. MXgel bioelectronics exhibit exceptional electrical conductivities, low electrochemical impedances, and high charge injection capacities.
Raghav Garg, Franco A. Laimo, Stefano Ippolito, Prastuti Upadhyay, Spencer R. Averbeck, Dimitris Boufidis, Charles‐Antoine Assenmacher, Dayo O. Adewole, Sai Panigrahy, Bita Soltan Mohammadlou, Lucy Plant, Yuan Zhang, Andrew G. Richardson, Yury Gogotsi, D. Kacy Cullen, Flavia Vitale   +15 more
wiley   +1 more source

Interface‐Mediated Catalysis for Improved Hydrogen Storage in Reactive Hydride Composites

Advanced Materials, EarlyView.
Catalyst–hydride interfaces are engineered in Co@C‐ and Ni@C‐modified 2LiH + MgB2 reactive hydride composites to accelerate hydrogen uptake and release. Multiscale scattering, in‐situ synchrotron radiation powder x‐ray diffraction and density functional theory calculations reveal the structural and electronic origin of the catalytic enhancement ...
Yuanyuan Shang, Pawan Kumar Soni, Han Ge, Weijie Yang, Fahim Karimi, Thi Thu Le, Tamás Simon, Michael Fröba, Jitendra Mata, Joshua King, Hai‐Wen Li, Thomas Klassen, Claudio Pistidda   +12 more
wiley   +1 more source

Giant Anisotropic Spin Absorption in Chiral Hybrid Semiconductors

Advanced Materials, EarlyView.
Researchers uncover that chiral hybrid organic–inorganic semiconductors absorb spin differently depending on its polarization direction. This anisotropic spin absorption is primarily driven by the local symmetry breaking within the layered structure.
Cong Yang, Rui Sun, Mingwei Ge, Shehzad Khan, Subhrangsu Mukherjee, Matthew P. Hautzinger, Tianyou Lu, Harald Ade, Pius M. Theiler, Matthew C. Beard, Dali Sun, Mengxia Liu, Jun Liu   +12 more
wiley   +1 more source

Gamma/delta T cells as cellular vehicles for anti-tumor immunity. [PDF]

Front Immunol, 2023
Wang CQ, Lim PY, Tan AH.
europepmc   +1 more source

Charge Storage and Dark Photocatalysis in Multivariate Ti‐Based Metal‐Organic Frameworks

Advanced Materials, EarlyView.
The mixed‐linker series of the titanium‐based metal–organic framework COK‐47 enables systematic tuning of photoresponsiveness and (dark) photocatalytic activity, deepening our understanding of structure‐property‐function relationships. Tailored metal‐to‐ligand charge transfer between the secondary building units (metal‐oxo layers and organic linkers ...
Julia E. Knapp, Bibhuti Bhusan Rath, Borja Ortín‐Rubio, Lukas Bauder, Kristina Gjorgjevikj, Saunak Das, Mariia Ferree, Frédéric Laquai, Lorenzo Tesi, Bettina Baumgartner, Simon Krause, Bettina V. Lotsch   +11 more
wiley   +1 more source

Highly Sensitive Broadband Photodetectors Based on Donor–Acceptor 2D Conjugated Coordination Polymers

Advanced Materials, EarlyView.
Donor–acceptor molecular design and chemical vapor deposition growth enable the two‐dimensional nickel‐tetraaminobenzoquinone films with strong broadband absorption and efficient charge separation. The resulting photodetectors exhibit a structured broadband response with a high responsivity of ∼3.1 A W−1 and a response time of ∼170 µs, which surpasses ...
Yunxu Chen, Jinxin Liu, Shuai Fu, Apurba Mahapatra, Dongxu Wang, Mike Hambsch, Angelika Wrzesińska‐Lashkova, Jing Wang, Fabian Paulus, Yana Vaynzof, Stefan C. B. Mannsfeld, Fuchun Zhang, Mischa Bonn, Renhao Dong, Xinliang Feng   +14 more
wiley   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

Advanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu, Junjie Zhao, Richard Schroedter, Jason Vincent, Hampus Hoffman, Leif Riemenschneider, Abdallh Herbawe, Hao Shen, Ronald Tetzlaff, Stefan Slesazeck, Gianaurelio Cuniberti, Thomas Mikolajick, Benjamin Max   +12 more
wiley   +1 more source