Results 91 to 100 of about 14,063 (222)

Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas [PDF]

AUT Journal of Electrical Engineering
In this work, we present an analytical DC model for the Gallium Nimtide High Electron Mobility Transistor by taking into account the finite width of the two-dimensional electron gas (2DEG) layer.
Behnam Jafari Touchaei, Majid Shalchian
doaj   +1 more source

Nano‐Scale Phonon Dynamics in GaN: Fundamentals and Strategies for Thermal Transport Modulation

Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.
Xx xx. ABSTRACT With the rapid advancement of electronic technologies, the effective thermal management in gallium nitride (GaN) ‐based devices has emerged as a critical challenge, particularly as device dimensions shrink to scales comparable to phonon mean free paths.
Tiantian Luan, Liwen Sang, Ziling Cai, Yutao Fang, Yabing Li, Rui Yin, Jianlu Wang, Bo Shen   +7 more
wiley   +1 more source

Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

IEEE Access
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C.
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Norhawati Ahmad, Muammar Mohamad Isa, Alhan Farhanah Abd Rahim, Khaled Ahmeda   +5 more
doaj   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications

Journal of Science: Advanced Materials and Devices, 2019
In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric.
Touati Zine-eddine, Hamaizia Zahra, Messai Zitouni   +2 more
doaj   +1 more source

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

, 2017
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the ...
Dolmanan, Surani Bin, Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy Neelim, Pratiyush, Anamika Singh, Tripathy, Sudhiranjan   +5 more
core   +1 more source

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Micromachines
Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the ...
Chenbi Li, Xinghuan Chen, Zeheng Wang
doaj   +1 more source

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

IEEE Journal of the Electron Devices Society, 2018
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.
Kwang Hong Lee, Yue Wang, Bing Wang, Li Zhang, Wardhana Aji Sasangka, Shuh Chin Goh, Shuyu Bao, Kenneth E. Lee, Eugene A. Fitzgerald, Chuan Seng Tan   +9 more
doaj   +1 more source

Polarization fields in nitride nanostructures: ten points to think about

, 1999
Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a ...
Ambacher, Ambacher, Bernardini, Bernardini, Bernardini, Bernardini, Bernardini, Burns, Bykhovski, Chichibu, Della Sala, Di Carlo, Fabio Bernardini, Fiorentini, Gil, Im, King-Smith, Kodozoy, Langer, Lefebvre, Oberhuber, Peng, Resta, Shimada, Takeuchi, Vanderbilt, Vincenzo Fiorentini, Yu   +27 more
core   +1 more source

GaN-HEMT Performance Enhancement

Journal of Electrical Systems
In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented.
openaire   +1 more source