Results 101 to 110 of about 14,063 (222)

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Micromachines
With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field.
Pengfei Dai, Shaowei Wang, Hongliang Lu
doaj   +1 more source

Recent Advancements in N-polar GaN HEMT Technology

Crystals
N-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability.
Emre Akso, Kamruzzaman Khan, Henry Collins, Boyu Wang, Robert Hamwey, Tanmay Chavan, Christopher Clymore, Weiyi Li, Oguz Odabasi, Matthew Guidry, Stacia Keller, Elaheh Ahmadi, Steven P. DenBaars, Umesh Mishra   +13 more
doaj   +1 more source

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +1 more source

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

, 2015
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy.
Ganguly, Satyaki, Hu, Zongyang, Jena, Debdeep, Li, Guowang, Mintairov, Alexander, Protasenko, Vladimir, Qi, Meng, Song, Bo, Verma, Jai, Xing, Huili Grace, Yan, Xiaodong, Zhao, Pei, Zhu, Mingda   +12 more
core   +1 more source

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

, 2015
The effect of a tunable, externally coupled Fabry-P\'{e}rot cavity to resonantly enhance the optical Hall effect signatures at terahertz frequencies produced by a traditional Drude-like two-dimensional electron gas is shown and discussed in this ...
Carlin, J. -F., Darakchieva, V., Grandjean, N., Herzinger, C. M., Hofmann, T., Knight, S., Kühne, P., Schubert, M., Schöche, S.   +8 more
core   +1 more source

Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter [PDF]

In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented.
Blaabjerg, Frede, Castellazzi, Alberto, Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng   +4 more
core  

Computational-fitting method for mobility extraction in GaN HEMT. [PDF]

RSC Adv, 2023
Chang KC, Feng X, Liu H, Liu K, Lin X, Li L.   +5 more
europepmc   +1 more source

A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Kim JG, Baek D.
europepmc   +1 more source

Simplified EPFL GaN HEMT Model

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior.
Jazaeri, Farzan, Shalchian, Majid, Yesayan, Ashkhen, Rassekh, Amin, Mangla, Anurag, Parvais, Bertrand, Sallese, Jean-Michel   +6 more
openaire   +2 more sources

Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers

Results in Engineering
GaN HEMT has gained much interest recently because of its widespread uses, which range from high voltage systems used in power electronic devices to RF power amplifiers.
A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar   +6 more
doaj   +1 more source