Results 111 to 120 of about 14,063 (222)

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

A 37-40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT. [PDF]

Nanomaterials (Basel), 2023
Song JH, Lee EG, Lee JE, Son JT, Kim JH, Baek MS, Kim CY.   +6 more
europepmc   +1 more source

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP₂S₆/GaN HEMT. [PDF]

Sci Adv, 2023
Park M, Yang JY, Yeom MJ, Bae B, Baek Y, Yoo G, Lee K.   +6 more
europepmc   +1 more source

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT. [PDF]

Micromachines (Basel), 2023
Liu C, Wang J, Chen Z, Liu J, Su J.
europepmc   +1 more source

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms. [PDF]

Nanomaterials (Basel), 2023
Meng Q, Lin Q, Wang Z, Wang Y, Jing W, Xian D, Zhao N, Yao K, Zhang F, Tian B, Jiang Z.   +10 more
europepmc   +1 more source

GaN/AlGaN hemt yapılarda saçılma mekanizmaları

, 2005
ÖZET GaN/AlGaN HEMT YAPILARDA SAÇILMA MEKANİZMALARI Aykut İLGAZ Balıkesir Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Anabilim Dalı (Tez Danışmanı : Yrd. Doç. Dr. Sibel GÖKDEN) Balıkesir, 2005 Bu çalışmada, GaN/AlGaN arayüzeyinde oluşan 2 boyutlu elektron gazının (2BEG) Hail mobilitesine, başlıca saçılma mekanizmaları olan dislokasyon, deformasyon ...
openaire   +2 more sources

Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications. [PDF]

PLoS One, 2023
Soruri M, Razavi SM, Forouzanfar M, Colantonio P.   +3 more
europepmc   +1 more source

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. [PDF]

Sensors (Basel), 2023
Pagnini L, Collodi G, Cidronali A.
europepmc   +1 more source

X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology. [PDF]

Sensors (Basel), 2023
Lee H, Park HG, Le VD, Nguyen VP, Song JM, Lee BH, Park JD.   +6 more
europepmc   +1 more source

Optimization AlGaN/GaN HEMT with Field Plate Structures. [PDF]

Micromachines (Basel), 2022
Shi N, Wang K, Zhou B, Weng J, Cheng Z.
europepmc   +1 more source