Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Li Y, Huang Y, Li J, Sun H, Guo Z.
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A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices. [PDF]
Fan C +8 more
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A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model of a Dual-Field-Plate GaN HEMT. [PDF]
Shen H +6 more
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Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. [PDF]
Zhang X +11 more
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Pulsed operation and performance of commercial GaN HEMTs [PDF]
Beach, MA, Fornetti, F, Morris, KA
core
Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage. [PDF]
Peng Z, Liu H, Yu H, Li L, Chang KC.
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GaN HEMT study at cryotemperatures
V.V. Krasnov +3 more
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Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model. [PDF]
Li R, Ge C, Liang C, Zhong S.
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A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks. [PDF]
Chen L +6 more
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A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios. [PDF]
Kuchta D, Gryglewski D, Wojtasiak W.
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